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Low-frequency noise performance of a molybdenum ditelluride double-gate MOSFET

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Abstract

This work investigates the low-frequency noise performance of a 2H-type monolayer/bilayer molybdenum ditelluride (MoTe2) double-gate MOSFET. A hybrid simulation technique involving both QuantumWise ATK and Sentaurus TCAD tools has been used to simulate the device characteristics. First, density functional theory (DFT) has been used to simulate the electrical characteristics of monolayer and bilayer 2H–MoTe2. The parameters (bandgap and effective mass, mobility etc.) obtained using the atomistic simulator tool are exported into Sentaurus TCAD to simulate the drain current characteristics. We have used the kinetic velocity model and quantum model to account for the ballistic mobility and quantum effects in the device. The noise simulation for the bilayer MoTe2 is computed using the impedance field method. Noise parameters such as noise power spectral density (SID) as a function of frequency and bias, and noise figure have also been simulated.

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Funding

The work was supported by Department of Science and Technology (DST) Core Research Grant (CRG/2020/004241). The author Dr. Ramesh R has received research support from DST.

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Authors and Affiliations

  1. Device Modeling Lab, School of Electrical and Electronics Engineering, SASTRA Deemed University, Thanjavur, India

    M. Muthu Manjula & R. Ramesh

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  1. M. Muthu Manjula
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  2. R. Ramesh
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Contributions

All authors contributed to the study conception and design. Dr. RR extracted the material properties from the Quantumwise ATK and Ms. MMM did the TCAD simulation. The first draft of the manuscript was written by both authors. They also read and approved the final manuscript.

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Correspondence to R. Ramesh.

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Manjula, M.M., Ramesh, R. Low-frequency noise performance of a molybdenum ditelluride double-gate MOSFET. J Comput Electron 22, 1433–1442 (2023). https://doi.org/10.1007/s10825-023-02074-0

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  • DOI: https://doi.org/10.1007/s10825-023-02074-0

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