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The spin-polarized dwell time in a parallel double δ-magnetic-barrier nanostructure

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Abstract

The dwell time of electrons in a parallel double δ-magnetic-barrier (MB) nanostructure constructed by patterning an asymmetric ferromagnetic stripe on both the top and bottom of an InAs/AlxIn1−xAs heterostructure is calculated. Because the electron spins interact with the structural magnetic fields, the dwell time depends on the electron spins. Moreover, both the magnitude and sign of the spin-polarized dwell time can be modified by changing the magnetic field, the applied voltage, and the separation between the two δ-MBs. The electron spins can thus be separated in the time dimension, and such a magnetic nanostructure could serve as a controllable temporal spin splitter for use in spintronics device applications.

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Acknowledgements

This work was supported by the Scientific Research Fund of Hunan Provincial Education Department (grant no. 18C1290).

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Authors and Affiliations

  1. College of Science, Guilin University of Technology, Guilin, 541004, People’s Republic of China

    Sai-Yan Chen & Xue-Li Cao

  2. Hunan Urban Professional College, Changsha, 410100, People’s Republic of China

    Gui-Lian Zhang & Fang-Fang Peng

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  1. Sai-Yan Chen
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  2. Gui-Lian Zhang
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  4. Fang-Fang Peng
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Correspondence to Sai-Yan Chen.

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Chen, SY., Zhang, GL., Cao, XL. et al. The spin-polarized dwell time in a parallel double δ-magnetic-barrier nanostructure. J Comput Electron 20, 785–790 (2021). https://doi.org/10.1007/s10825-020-01653-9

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  • DOI: https://doi.org/10.1007/s10825-020-01653-9

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