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RF analysis and noise characterization of junctionless nanowire FETs by a Boltzmann transport equation solver

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Abstract

The junctionless nanowire field-effect transistor (JN-FET) stands out among the most promising architectures for future MOSFETs. While a fair amount of the published literature has focused on the static performance of JN-FETs, detailed numerical investigation of their RF small-signal and noise behavior on the device level still lacks. This paper reports the ac and noise characteristics of JN-FETs with different gate lengths and shows that due to the improved electrostatic control and better immunity to short-channel effects, several key quantities such as the drain/gate excess noise factors and correlation coefficient demonstrate classical long-channel behavior for channel lengths as small as 16 nm. The results are obtained using an in-house simulation tool, which provides the deterministic and self-consistent solution of the multi-subband Poisson, Schrödinger, and Boltzmann equations.

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Funding

Funding was provided by RWTH Aachen University.

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Authors and Affiliations

  1. Institute of Electromagnetic Theory, RWTH Aachen University, Kackertstrasse 15, 52072, Aachen, Germany

    Maziar Noei & Christoph Jungemann

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  1. Maziar Noei
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  2. Christoph Jungemann
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Correspondence to Maziar Noei.

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Noei, M., Jungemann, C. RF analysis and noise characterization of junctionless nanowire FETs by a Boltzmann transport equation solver. J Comput Electron 18, 1347–1353 (2019). https://doi.org/10.1007/s10825-019-01381-9

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