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3D numerical simulations of single-event transient effects in SOI FinFETs

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Abstract

The characteristics and mechanism of single-event transients in silicon-on-insulator (SOI) fin field-effect transistors (FinFETs) were analyzed using Sentaurus technology computer-aided design (TCAD) simulations based on the bipolar amplification effect. The results show that a typical single pulse mode of the transient leakage current is observed. The peak current and collected charge increase approximately linearly with increase of the linear energy transfer. The electric field in the depletion region of the FinFET body–drain junction increases significantly when the drain bias increases, resulting in a sharp increase in the drift current until reaching the saturation state. The variation of the bipolar gain and transient current with the position of incidence of the particle shows good consistency, reaching a maximum in the FinFET drain region, which indicates that the drain depletion region of SOI FinFETs is most sensitive to heavy-ion irradiation due to the bipolar amplification effect. The bipolar gain increases with decrease of the gate length and increase of the fin height and width.

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Acknowledgements

This research is supported by the Equipment Pre-research Project of China (no. 41424050607).

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Authors and Affiliations

  1. Key Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi’an, People’s Republic of China

    Zhenyu Wu, Benneng Zhu, Tengyue Yi, Chao Li, Yi Liu & Yintang Yang

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  1. Zhenyu Wu
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  2. Benneng Zhu
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  3. Tengyue Yi
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Correspondence to Zhenyu Wu.

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Wu, Z., Zhu, B., Yi, T. et al. 3D numerical simulations of single-event transient effects in SOI FinFETs. J Comput Electron 17, 1608–1614 (2018). https://doi.org/10.1007/s10825-018-1254-1

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