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HSPICE model and circuit simulation for a single-event effect caused by ions at different incident positions

Abstract

A 3D model of the negative-channel metal-oxide semiconductor (NMOS) structure in a 65-nm complementary metal-oxide semiconductor (CMOS) inverter was built based on technology computer-aided design (TCAD) three-dimensional (3D) device simulation software. The single-event effect caused by a heavy ion at different incident positions was simulated and analyzed using the TCAD–HSPICE mixed-mode simulation. Then, an analytical model was established to describe the relationship between the incident position of the ion and the charge collected by the NMOS drain. Finally, an HSPICE simulation approach based on this model was developed and verified by simulations.

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Acknowledgements

This research was partially supported by Equipment Pre-research Project of China (No. 41424050607).

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Correspondence to Tengyue Yi.

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Yi, T., Liu, Y., Wu, Z. et al. HSPICE model and circuit simulation for a single-event effect caused by ions at different incident positions. J Comput Electron 17, 994–1000 (2018). https://doi.org/10.1007/s10825-018-1201-1

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  • DOI: https://doi.org/10.1007/s10825-018-1201-1

Keywords

  • Analytical model
  • CMOS
  • HSPICE
  • SEE
  • TCAD