The effect of sharp-corner emendation of irregular FinFETs on electrothermal characteristics

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Abstract

The present study is an attempt to investigate the impacts of channel modification and the capabilities of amended sharp-corner FinFETs from thermal and electrical points of view. It also provides a new definition for gate-oxide and channel capacitance of irregular fin shape by replacing the contribution of each area in the total gate capacitance expression of the square FinFET. This definition determines the subthreshold reliability of the amended sharp-corner FinFETs. As a function of gate insulator capacitance, channel capacitance, depletion charge per unit length, and fin area, mobile electron concentrations are derived for amended sharp-corner FETs by assuming an arbitrary channel potential profile to simplify the formulation. The comparison results demonstrate that an amended FinFET with a partial cylindrical shape at the top region of fin (PC-FinFET) by higher gate controllability adjusts the hot carrier effects, reduces DIBL, improves the subthreshold characteristics as well as short-channel effects, while the amended-channel FinFET with extended round-bottom region reduces the self-heating effects, attenuates the thermal resistance, and moderates the thermal dependence of electrical characteristics. Therefore, it is deduced that modified-channel FinFET (MC-FinFET), with both cylindrical top and extended bottom regions, has improved thermal and electrical stabilities in both subthreshold and saturation modes in comparison with a conventional thin-film FinFET. The superiority of the MC-FinFET, which was evaluated with three-dimensional simulations, demonstrates the ability of this structure as a high-performance device over the other eliminated sharp-corner FinFETs.

Keywords

Sharp corners Hot carriers Self-heating Short-channel behavior Thermal stability FinFET Non-rectangular Irregular fin 

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© Springer Science+Business Media, LLC, part of Springer Nature 2018

Authors and Affiliations

  1. 1.Electrical and Computer Engineering DepartmentSemnan UniversitySemnanIran

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