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Influence of oblique magnetic field on the impact ionization rate of charge carriers in semiconductors

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Abstract

In this paper, an analytical model has been presented to study the influence of magnetic field on the impact ionization rate of charge carriers in semiconductors. The magnetic field is supposed to be applied along the oblique direction with respect to the direction of applied electric field. Numerical calculations have been carried out by using the comprehensive analytic expression of ionization rate of charge carriers formulated by the authors, in order to study the effect of oblique magnetic field on the ionization rate of electrons and holes moving under a steady electric field in 4H-SiC. Results show that the application of nonzero steady magnetic field in oblique direction leads to significant reduction in ionization rates. Moreover, the above-mentioned magnetic field-induced reduction in ionization rates is found to be maximum when the steady magnetic field is applied along the normal direction with respect to the external electric field.

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Acknowledgements

The authors wish to thank Cooch Behar Government Engineering College, WB, India, for providing excellent research facilities for carrying out the present work.

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  1. Cooch Behar Government Engineering College, Harinchawra, Ghughumari, Cooch Behar, West Bengal, 736170, India

    Prajukta Mukherjee, Debjyoti Chatterjee & Aritra Acharyya

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  1. Prajukta Mukherjee
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  2. Debjyoti Chatterjee
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  3. Aritra Acharyya
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Correspondence to Aritra Acharyya.

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Mukherjee, P., Chatterjee, D. & Acharyya, A. Influence of oblique magnetic field on the impact ionization rate of charge carriers in semiconductors. J Comput Electron 16, 503–513 (2017). https://doi.org/10.1007/s10825-017-1014-7

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  • DOI: https://doi.org/10.1007/s10825-017-1014-7

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