Abstract
In short-channel silicon-on-insulator metal-oxide-semiconductor transistors (SOI MOSFETs) the high electric field near the drain increases the floating-body effect. The aim of this article is to introduce a novel structure that reduces the electric field near the drain, so improving the floating-body effect. In the proposed structure, a dual trench is created in the buried oxide exactly under the junctions of drain/source and channel and is filled with an n-type SiGe material. The dual trench regions absorb the electric field lines and hence, the electric characteristic significantly improve. The proposed structure is named as dual SiGe trench double gate SOI MOSFET. In addition, we observe a considerable improvement in self-heating effects due to the higher thermal conductivity of SiGe in comparison with silicon dioxide.
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References
Celler, G.K., Cristoloveanu, S.: Frontiers of silicon-on-insulator. J. Appl. Phys. 93(2), 4955–4978 (2003)
Kuo, J.B.: Low-Voltage SOI CMOS VLSI Devices and Circuits, 1st edn, pp. 4–5. Wiley, New York (2001)
Arnold, E.: Silicon-on-lnsulator devices for high voltage and power IC applications. J. Electrochem. Soc. 141(7), 1983–1988 (1994)
Vasileska, D., Raleva, K., Goodnick, S.M.: Modeling heating effects in nanoscale devices: the present and the future. J. Comput. Electron. 7(2), 67–75 (2008)
Ning, T.H., Cook, P.W., Dennard, R.H., Schuster, C.M., Yu, H.N.: 1 \(\mu \)m MOSFET VLSI technology: Part IV—Hot-electron design constraints. IEEE Trans. Electron Devices ED–26(4), 346–353 (1979)
Narayanan, M.R., Al-Nashash, H., Dipankar, P.: Thermal model of MOSFET with SELBOX structure. J.Comput. Electron. 12, 803–811 (2013)
Valdinoci, M., Colalongo, L., Baccarani, G., Fortunato, G., Pecora, A., Policicchio, I.: Floating body effects in polysilicon thin-film transistors. IEEE Trans. Electron Devices 44, 2234–2241 (1997)
Orouji, Ali A., Mehrad, Mahsa: The best control of parasitic BJT effect in SOI-LDMOS with SiGe window under channel. IEEE Trans. Electron Devices 59(2), 419–425 (2012)
Yoo, J.S., Kim, C.H., Lee, M.C., Han, M.K., Kim, H.J.: Reliability of low temperature poly-Si TFT employing counter-doped lateral body terminal. In: IEDM Technical Digest, pp. 217–220 (2000)
Chan, M., Yu, B., Ma, Z.J., Nguyen, C.T., Hu, C., Ko, P.K.: Comparative study of fully depleted and body-grounded non fully depleted SOI MOSFETs for high performance analog and mixed signal circuits. IEEE Trans. Electron Devices 42, 1975–1981 (1995)
Sleight, J.W., Mistry, K.R., Trans, I.E.E.E.: DC and transient characterization of a compact Schottky body contact technology for SOI transistors. IEEE Trans. Electron Devices 46, 1451–1456 (1999)
Lu, H., Andre, C., Salama, T.: A 2 GHz, 60 V-Class, SOI power LDMOSFET for base station applications. In: Proceedings of the IEEE 15th International Symposium on ISPSD, pp. 270–273 (2003)
Anvarifard, Mohammad K., Orouji, Ali A.: Improvement of electrical properties in a novel partially depleted SOI MOSFET with emphasizing on the hysteresis effect. IEEE Trans. Electron Devices 60(10), 3310–3317 (2013)
ATLAS User’s Manual: 2-D Device Simulator. SILVACO International, Austin (2012)
Kumar, Mirgender, Dubey, Sarvesh, Tiwari, Pramod Kumar, Jit, S.: Analytical modeling and simulation of subthreshold characteristics of back-gated SSGOI and SSOI MOSFETs: a comparative study. Curr. Appl. Phys. 13, 1778–1786 (2013)
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Orouji, A.A., Rahimifar, A. & Jozi, M. A novel double-gate SOI MOSFET to improve the floating body effect by dual SiGe trench. J Comput Electron 15, 537–544 (2016). https://doi.org/10.1007/s10825-016-0801-x
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DOI: https://doi.org/10.1007/s10825-016-0801-x