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Physics-based simulation of 4H-SIC DMOSFET structure under inductive switching

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Abstract

The integration of high power silicon carbide (SiC) Metal Oxide Semiconductor Field Effect Transistors (MOSFETs) in today’s power systems drives the demand for deeper understanding of the device switching characteristics by way of device simulation. Applications like motor drive require power MOSFETs to drive highly inductive loads which increase the switching power loss by extending the voltage and current crossover, a situation which gets exacerbated by the presence of parasitic inductance. A 2D model of a 1200 V 4H-SiC vertical DMOSFET half-cell was developed using a commercially available TCAD software package to investigate the electro-thermal switching characteristics using clamped inductive switching circuit for ON state drain current density values up to \(100\,\hbox {A/cm}^{2}\) at an ambient lattice temperature of 300 K. Device physics-based models were included to account for carrier mobility, carrier generation and recombination, impact ionization and lattice heating. In order to analyze the areas of localized lattice heating, the lattice temperature distribution was monitored during simulation. The clamped inductive switching circuit simulations were performed with and without the addition of parasitic electrode inductance to observe the difference in switching energy loss.

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Authors and Affiliations

  1. Electrical and Computer Engineering, Texas Tech University, 2500 Broadway, Lubbock, TX, 79409, USA

    Bejoy N. Pushpakaran & Stephen B. Bayne

  2. Sensors and Electron Devices Directorate (SEDD), Army Research Lab, 2800 Powder Mill Road, Adelphi, MD, 20783, USA

    Aderinto A. Ogunniyi

Authors
  1. Bejoy N. Pushpakaran
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  2. Stephen B. Bayne
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  3. Aderinto A. Ogunniyi
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Correspondence to Bejoy N. Pushpakaran.

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Pushpakaran, B.N., Bayne, S.B. & Ogunniyi, A.A. Physics-based simulation of 4H-SIC DMOSFET structure under inductive switching. J Comput Electron 15, 191–199 (2016). https://doi.org/10.1007/s10825-015-0766-1

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  • DOI: https://doi.org/10.1007/s10825-015-0766-1

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