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Dual metal-double gate tunnel field effect transistor with mono/hetero dielectric gate material

Journal of Computational Electronics volume 14, pages 537–542 (2015)Cite this article

Abstract

In this paper, dual metal-double gate tunnel field effect transistor (DMG-DGTFET) is discussed for mono & hetero dielectric gate material. The hetero dielectric that we have used at the gate is a combination of SiO\(_{\text{2 }}\) and HfO\(_{\text{2 }}\). The DMG technique is used to optimize the performance of DGTFET along with the mono/hetero dielectric gate material. The results obtained from the simulation are discussed using energy band diagram, tunneling barrier width and compared with hetero & mono dielectric gate. With the application of hetero dielectric to the DMG-DGTFET, the advantages of both the techniques combine and the results shows that higher \(I_{ON} /I_{OFF}\) ratio \((2\times 10^{9})\) compared to the mono dielectric case \((2.5\times 10^{8})\). The average subthreshold slope also improves from 58 mV/decade in mono dielectric to 48 mV/decade in hetero dielectric DMG-DGTEFT. All the simulations are done in Synopsys TCAD for a channel length of 25 nm using the non-local tunneling model.

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Authors and Affiliations

  1. Department of Electrical Engineering, Indian Institute of Technology Kanpur, Kanpur, 208016, India

    Prateek Jain, Vishwa Prabhat & Bahniman Ghosh

  2. Microelectronics Research Center, University of Texas at Austin, 10100, Burnet Road, Bldg. 160, Austin, TX, 78758, USA

    Bahniman Ghosh

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  1. Prateek Jain
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Correspondence to Prateek Jain.

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Jain, P., Prabhat, V. & Ghosh, B. Dual metal-double gate tunnel field effect transistor with mono/hetero dielectric gate material. J Comput Electron 14, 537–542 (2015). https://doi.org/10.1007/s10825-015-0685-1

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  • DOI: https://doi.org/10.1007/s10825-015-0685-1

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