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Multiple-band large-signal characterization of millimeter-wave double avalanche region transit time diode

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Abstract

A large-signal method based on non-sinusoidal voltage excitation model is used to study the DC and RF characteristics of Double Avalanche Region (DAR) Silicon Transit Time diode. A large-signal simulation program based on drift-diffusion model is developed for this study. The simulation results show the existence of several distinct negative conductance bands in the admittance characteristics separated by positive conductance. Thus the DAR device is capable of delivering RF power not only at the design frequency but also at several frequency bands higher than the design frequency band in the mm-wave regime. A comparative study with DDR Si device designed to deliver RF power at a particular mm-wave frequency band shows that DAR Si device is capable of delivering significantly higher RF power not only at the designed mm-wave frequency band, but also at higher frequency bands.

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Acknowledgments

The senior most author, Professor Dr. J. P. Banerjee (same as J. P. Bandyopadhyay) is grateful to the University Grants Commission, India for supporting the research through the award of an Emeritus Fellowship in the Institute of Radio Physics and Electronics, University of Calcutta.

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Authors and Affiliations

  1. Institute of Radio Physics and Electronics, University of Calcutta, 92, APC Road, Kolkata , 700009, India

    Atindra Mohan Bandyopadhyay, Aritra Acharyya & J. P. Banerjee

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  1. Atindra Mohan Bandyopadhyay
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  2. Aritra Acharyya
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  3. J. P. Banerjee
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Correspondence to Aritra Acharyya.

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Bandyopadhyay, A.M., Acharyya, A. & Banerjee, J.P. Multiple-band large-signal characterization of millimeter-wave double avalanche region transit time diode. J Comput Electron 13, 769–777 (2014). https://doi.org/10.1007/s10825-014-0599-3

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