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Modeling of deep-submicron silicon-based MISFETs with calcium fluoride dielectric

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Abstract

We model the main characteristics of metal-insulator-silicon field-effect transistors (MISFETs) with different gate insulators using the carrier energy distribution function calculated with a Spherical Harmonics Expansion method. In addition to standard devices with Silicon Dioxide or Oxynitride we study a hypothetical MISFET with a rather new crystalline dielectric-Calcium Fluoride. The real physical parameters of the \(\hbox {CaF}_{2}\)/Si tunnel barrier are used in our simulations. The obtained characteristics of the transistors with \(\hbox {CaF}_{2}\) are, in some details, better than those of the devices with traditional oxides. Being a step forward in the context of the industrial implementation of fluorite, this work opens the possibility of simulating the characteristics of different silicon-based devices with crystalline insulators.

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References

  1. Vexler, M.I., Sokolov, N.S., Suturin, S.M., Banshchikov, A.G., Tyaginov, S.E., Grasser, T.: J. Appl. Phys., 105, Paper No. 083716 (2009)

  2. Watanabe, S., Maeda, M., Sugisaki, T., Tsutsui, K.: Jpn. J. Appl. Phys. 44, 2637 (2005)

  3. Watanabe, M., Funayama, T., Teraji, T., Sakamaki, N.: Jpn. J. Appl. Phys. 39, L716 (2000)

    Article  Google Scholar 

  4. Watanabe, M., Iketani, Y., Asada, M.: Jpn. J. Appl. Phys. 39, L964 (2000)

    Article  Google Scholar 

  5. Waho, T., Yanagawa, F.: IEEE Electron Dev. Lett. 9, 548 (1988)

    Article  Google Scholar 

  6. Smith, T.P., Phillips, J.M., Augustyniak, W.M., Stiles, P.J.: Appl. Phys. Lett. 45, 907 (1984)

    Article  Google Scholar 

  7. MINIMOS-NT User’s Guide, Institute for Microelectronics, TU Wien, Austria.

  8. Rupp, K., Grasser, T., Jungel, A.: IEDM Tech. Dig., pp. 34.1.1-34.1.4 (2011)

  9. Rupp, K., Grasser, T., Jungel, A.: Proc. SISPAD, pp. 151–154 (2011)

  10. Jungemann, C., Meinerzhagen, B.: Hierarchical device simulation: the Monte-Carlo perspective. Springer, Berlin (2003)

    Book  Google Scholar 

  11. Bina, M., Rupp, K., Tyaginov, S., Triebl, O., Grasser, T.: IEDM Tech. Dig., pp. 713–716 (2012)

  12. Tyaginov, S., Bina, M., Franco, J., Osintsev, D., Triebl, O., Kaczer, B., Grasser, T., Proc. IRPS, XT.16.1-16.8 (2014)

  13. Synopsis, Sentaurus Process, Advanced Simulator for Process Technologies.

  14. Selberherr, S., Haensch, W., Seavey, M., Slotboom, J.: Solid-State Electron. 33, 1425 (1990)

    Article  Google Scholar 

  15. Weinberg, Z.A.: Solid-State Electron. 20, 11 (1977)

    Article  Google Scholar 

  16. Vexler, M.I., Illarionov, YuYu., Suturin, S.M., Fedorov, V.V., Sokolov, N.S.: Phys. of the Solid State 52, 2357 (2010)

    Article  Google Scholar 

  17. Illarionov, Yu.Yu., Vexler, M.I., Suturin, S.M., Fedorov, V.V., Sokolov, N.S., Tsutsui, K., Takahashi, K.: Microelectron. Eng. 88, 1291 (2011)

  18. Tyaginov, S., Starkov,I., Enichlmair, H., Park, J., Jungemann, C., Grasser, T.: Physics-based hot-carrier degradation models, ECS Transactions (2011)

  19. Rauch, S., Guarin, F., La Rosa, G.: IEEE Trans. Device Mater. Reliab. 1, 113 (2001)

    Article  Google Scholar 

Download references

Acknowledgments

The authors acknowledge support by the Austrian Science Fund (FWF), Grants Nos. P23598 and P26382, and the European Community FP7 Projects Nos. 261868 (MORDRED) and 619246 (ATHENIS 3D).

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Authors and Affiliations

  1. Vienna University of Technology, 27-29 Gusshausstr, 1040 , Vienna, Austria

    S. E. Tyaginov, Yu. Yu. Illarionov, M. Bina, J. Cervenka & T. Grasser

  2. Ioffe Physical-Technical Institute, 26 Polytechnicheskaya, 194021 , Saint Petersburg, Russia

    S. E. Tyaginov, Yu. Yu. Illarionov & M. I. Vexler

  3. IMEC, Kapeldreef 75, 3001 , Louvain, Belgium

    J. Franco & B. Kaczer

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  1. S. E. Tyaginov
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  2. Yu. Yu. Illarionov
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  3. M. I. Vexler
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  4. M. Bina
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  5. J. Cervenka
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  6. J. Franco
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  7. B. Kaczer
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  8. T. Grasser
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Correspondence to Yu. Yu. Illarionov.

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Tyaginov, S.E., Illarionov, Y.Y., Vexler, M.I. et al. Modeling of deep-submicron silicon-based MISFETs with calcium fluoride dielectric. J Comput Electron 13, 733–738 (2014). https://doi.org/10.1007/s10825-014-0593-9

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  • DOI: https://doi.org/10.1007/s10825-014-0593-9

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