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Electrical characterization and parameter extraction of organic thin film transistors using two dimensional numerical simulations

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Abstract

In this paper a performance based comparison of top and bottom contact organic thin film transistor (OTFT) device structures, using two dimensional numerical simulations has been carried out. In addition to this, investigations pertaining to the estimation of contact resistance in these OTFTs were also performed. To estimate contact resistance the conventional transmission line method and modified transmission line method (M-TLM) were respectively invoked. Our simulation results clearly indicate that the latter is more accurate in the estimation of contact resistance compared to the conventional method. Furthermore, the M-TLM was used to estimate the gate voltage and film thickness dependence of the contact resistance for the two device structures. The observed results have been explained on the basis of the significantly lowered area of carrier injection and extraction regions, at the source/channel and channel/drain interface respectively, in bottom contact transistor that lead to its inferior performance over the top contact transistor.

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References

  1. Gundlach, D.J., Zhou, L., Nichols, J.A., Jackson, T.N., Necliudov, P.V., Shur, M.S.: An experimental study of contact effects in organic thin film transistors. J. Appl. Phys. 100, 024509 (2006)

    Article  Google Scholar 

  2. Endo, T., Nagase, T., Kobayashi, T., Takimiya, K., Ikeda, M., Naito, H.: Solution-processed dioctylbenzothienobenzothiophene-based top-gate organic transistors with high mobility, low threshold voltage, and high electrical stability. Appl. Phys. Express 3, 121601 (2010)

    Article  Google Scholar 

  3. Hill, I.G.: Numerical simulations of contact resistance in organic thin-film transistors. Appl. Phys. Lett. 87, 163505 (2005)

    Article  Google Scholar 

  4. Brütting, W.: Physics of Organic Semiconductors. Wiley-VCH, Weinheim (2005)

    Book  Google Scholar 

  5. Singh, V., Yano, M., Takashima, W., Kaneto, K.: Study of gate induced channel in organic field effect transistors using poly(3-hexylthiophene) films. Jpn. J. Appl. Phys. 45, 534 (2006)

    Article  Google Scholar 

  6. Morita, T., Singh, V., Nagamatsu, S., Oku, S., Takashima, W., Kaneto, K.: Enhancement of transport characteristics in poly(3-hexylthiophene) films deposited with floating film transfer method. Appl. Phys. Express 2, 111502 (2009)

    Article  Google Scholar 

  7. Morita, T., Singh, V., Oku, S., Nagamatsu, S., Takashima, W., Hayase, S., Kaneto, K.: Ambipolar transport in bilayer organic field-effect transistor based on poly(3-hexylthiophene) and fullerene derivatives. Jpn. J. Appl. Phys. 49, 041601 (2010)

    Article  Google Scholar 

  8. Guo, Y., Yu, G., Liu, Y.: Functional organic field-effect transistors. Adv. Mater. 22, 4427 (2010)

    Article  Google Scholar 

  9. Di, C.A., Zhang, F., Zhu, D.: Multi-functional integration of organic field-effect transistors (OFETs): advances and perspectives. Adv. Mater. 25, 313 (2013)

    Google Scholar 

  10. Klauk, H., Halik, M., Zschieschang, U., Schmid, G., Radlik, W.: High-mobility polymer gate dielectric pentacene thin film transistors. J. Appl. Phys. 92, 5259 (2002)

    Article  Google Scholar 

  11. Shim, C.H., Maruoka, F., Hattor, R.: Structural analysis on organic thin-film transistor with device simulation. IEEE Trans. Electron Devices 57, 195 (2010)

    Article  Google Scholar 

  12. Ishikawa, Y., Wada, Y., Toyabe, T.: Origin of characteristics differences between top and bottom contact organic thin film transistors. J. Appl. Phys. 107, 053709 (2010)

    Article  Google Scholar 

  13. Marinkovic, M., Belaineh, D., Wagner, V., Knipp, D.: On the origin of contact resistances of organic thin film transistors. Adv. Mater. 24, 4005 (2012)

    Article  Google Scholar 

  14. Xu, Y., Gwoziecki, R., Chartier, I., Coppard, R., Balestra, F., Ghibaudo, G.: Modified transmission-line method for contact resistance extraction in organic field-effect transistors. Appl. Phys. Lett. 97, 063302 (2010)

    Google Scholar 

  15. SILVACO Inc., Atlas User’s Manual, Santa Clara, CA (2010)

  16. Gupta, D., Hong, Y.: Understanding the effect of semiconductor thickness on device characteristics in organic thin film transistors by way of two-dimensional simulations. Org. Electron. 11, 127 (2010)

    Article  Google Scholar 

  17. Necliudov, P.V., Shur, M.S., Gundlach, D.J., Jackson, T.N.: Modeling of organic thin film transistors of different designs. J. Appl. Phys. 88, 6594 (2000)

    Article  Google Scholar 

  18. Wang, L., Fine, D., Basu, D., Dodabalapur, A.: Electric-field-dependent charge transport in organic thin-film transistors. J. Appl. Phys. 101, 054515 (2007)

    Article  Google Scholar 

  19. Pesavento, P.V., Chesterfield, R.J., Newman, C.R., Frisbie, C.D.: Gated four-probe measurements on pentacene thin-film transistors: contact resistance as a function of gate voltage and temperature. J. Appl. Phys. 96, 7312 (2004)

    Article  Google Scholar 

  20. Mittal, P., Kumar, B., Negi, Y.S., Kaushik, B.K., Singh, R.K.: Channel length variation effect on performance parameters of organic field effect transistors. Microelectron. J. 43, 985 (2012)

    Article  Google Scholar 

  21. Verlaak, S., Arkhipov, V., Heremans, P.: Modeling of transport in polycrystalline organic semiconductor films. Appl. Phys. Lett. 82, 745 (2003)

    Article  Google Scholar 

  22. Bolognesi, A., Berliocchi, M., Manenti, M., Di Carlo, A., Lugli, P., Lmimouni, K., Dufour, C.: Effects of grain boundaries, field-dependent mobility, and interface trap states on the electrical characteristics of pentacene TFT. IEEE Trans. Electron Devices 51, 1997 (2004)

    Article  Google Scholar 

  23. Luan, S., Neudeck, G.W.: An experimental study of the source/drain parasitic resistance effects in amorphous silicon thin film transistors. J. Appl. Phys. 72, 766 (1992)

    Article  Google Scholar 

  24. Zaumseil, J., Baldwin, K.W., Rogers, J.A.: Contact resistance in organic transistors that use source and drain electrodes formed by soft contact lamination. J. Appl. Phys. 93, 6117 (2003)

    Article  Google Scholar 

  25. Bürgi, L., Sirringhaus, H., Friend, R.H.: Noncontact potentiometry of polymer field-effect transistors. Appl. Phys. Lett. 80, 2913 (2002)

    Article  Google Scholar 

  26. Puntambekar, K.P., Pesavento, P.V., Frisbie, C.D.: Surface potential profiling and contact resistance measurements on operating pentacene thin-film transistors by Kelvin probe force microscopy. Appl. Phys. Lett. 83, 5539 (2003)

    Article  Google Scholar 

  27. Bürgi, L., Richards, T.J., Friend, R.H., Sirringhaus, H.: Close look at charge carrier injection in polymer field-effect transistors. Appl. Phys. Lett. 94, 6129 (2003)

    Google Scholar 

  28. Ge, L., Ming, L., Hong, W., Wei, S.L., Yu, J.Z., Hua, L.X., Jiang, L.: Study of top and bottom contact resistance in one organic field-effect transistor. Chin. Phys. B 18, 3530 (2009)

    Article  Google Scholar 

  29. Lopez, M.A.Q., Wondmagegn, W.T., Alshareef, H.N., Bon, R.R., Gnade, B.E.: Thin film transistors for flexible electronics: contacts, dielectrics and semiconductors. J. Nanosci. Nanotechnol. 11, 5532 (2011)

    Article  Google Scholar 

  30. Seshadri, K., Frisbie, C.D.: Potentiometry of an operating organic semiconductor field-effect transistor. Appl. Phys. Lett. 78, 993 (2001)

    Article  Google Scholar 

  31. Klauk, H., Schmid, G., Radlik, W., Weber, W., Zhou, L., Sheraw, C.D., Nichols, J.A., Jackson, T.N.: Contact resistance in organic thin film transistors. Solid State Electron. 47, 297 (2003)

    Article  Google Scholar 

  32. Necliudov, P.V., Shur, M.S., Gundlach, D.J., Jackson, T.N.: Contact resistance extraction in pentacene thin film transistors. Solid State Electron. 47, 259 (2003)

    Article  Google Scholar 

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Acknowledgments

One of the authors VS would like to thank Department of Science and Technology (DST) India, for providing financial support to the Project titled “Development of High Sensitivity Organic Phototransistors Through Fine Control of Film Morphology and Interfacial Effects”, project number: SB/FTP/ETA-179/2012. VS would also like to thank director IIT Indore for providing seed Grant.

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  1. Molecular and Nanoelectronics Research Group (MNRG), Department of Electrical Engineering, Indian Institute of Technology Indore, Pithampur Auto Cluster Limited (PACL) Building, Survey No. 113/2-B, Village Hernia Khedi, Mhow, Indore , 453431, Madhya Pradesh, India

    Kshitij Bhargava & Vipul Singh

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  1. Kshitij Bhargava
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  2. Vipul Singh
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Correspondence to Kshitij Bhargava.

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Bhargava, K., Singh, V. Electrical characterization and parameter extraction of organic thin film transistors using two dimensional numerical simulations. J Comput Electron 13, 585–592 (2014). https://doi.org/10.1007/s10825-014-0574-z

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