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A novel SOI MESFET by \(\uppi \)-shaped gate for improving the driving current

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Abstract

This paper introduces a novel silicon-on-insulator (SOI) metal–semiconductor field-effect transistor (MESFET) with \(\uppi \)-shaped gate with triple workfunction (\(\uppi \)-SOI MESFET) to improve the DC and radio frequency characteristics. The DC and radio frequency characteristics of the proposed structure are analyzed by 2-D ATLAS international simulator and compared with a conventional SOI MESFET (C-SOI MESFET). The simulated results show that the proposed SOI MESFET has excellent effect on the breakdown voltage and the driving current. The breakdown voltage of the \(\uppi \)-SOI MESFET structure gets 54 % enhancement compared with that of the C-SOI MESFET structure and also the driving current of the \(\uppi \)-SOI MESFET structure gets 66.66 % enhancement compared with that of the C-SOI MESFET structure. Other main characteristics such as maximum output power density, maximum oscillation frequency and maximum available gain have been evaluated and improved in the proposed structure.

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Authors and Affiliations

  1. Electrical and Computer Engineering Department, Semnan University, Semnan, Iran

    Hadi Shahnazarisani, Ali A. Orouji & Mohammad K. Anvarifard

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  1. Hadi Shahnazarisani
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  2. Ali A. Orouji
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  3. Mohammad K. Anvarifard
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Correspondence to Ali A. Orouji.

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Shahnazarisani, H., Orouji, A.A. & Anvarifard, M.K. A novel SOI MESFET by \(\uppi \)-shaped gate for improving the driving current. J Comput Electron 13, 562–568 (2014). https://doi.org/10.1007/s10825-014-0569-9

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  • DOI: https://doi.org/10.1007/s10825-014-0569-9

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