Improvement of electrical characteristics of local BOX MOSFETs by heavily doped structures and elucidation of the related mechanism
- 130 Downloads
We proposed heavily doped silicon between insulators (HDSBI) MOSFETs to improve electrical characteristics of local BOX MOSFETs by using simple structures that combine local BOX regions with additional doped regions. HDSBI MOSFETs have heavily doped regions between local BOX regions, in which acceptors or traps are introduced. Simulated electrical characteristics demonstrated that they can suppress the SCEs and the kink effect, as well as the self-heating effect (SHE), which is suppressed by conventional local BOX MOSFETs. We elucidated how the additional doped regions in HDSBI MOSFETs suppress the SCEs and the kink effect. We concluded that HDSBI MOSFETs are suitable for applications, such as multi-purpose system-on-chip on which both short-channel logic circuits and high drive current circuits are integrated.
KeywordsSilicon-on-insulator (SOI) Ground plane Trap states Buried-oxide (BOX) layer Device simulation Kink effect Body floating effect Short-channel effect (SCE)
This work is supported by VLSI Design and Education Center (VDEC), the University of Tokyo in collaboration with Synopsys, Inc. The part of the device simulations has been supported by Y. Miyazawa.
- 5.Monfray, S., Skotnicki, T., Fenouillet-Beranger, C., Carriere, N., Chanemougame, D., Morand, Y., Descombes, S., Talbot, A., Dutartre, D., Jenny, C., Mazoyer, P., Palla, R., Leverd, F., Le Friec, Y., Pantel, R., Borel, S., Louis, D., Buffet, N.: Emerging silicon-on-nothing (SON) devices technology. Solid-State Electron. 48, 887–895 (2004) CrossRefGoogle Scholar
- 14.Wong, H.-S.P., Frank, D.J., Solomon, P.M.: Device design considerations for double-gate, ground-plane, and single-gated ultra-thin SOI MOSFET’s at the 25 nm channel length generation. In: International Electron Devices Meeting 1998. Technical Digest (Cat. No. 98CH36217), pp. 407–410. IEEE, New York (1998) CrossRefGoogle Scholar
- 18.TCAD Sentaurus: http://www.synopsys.com/Tools/TCAD/
- 19.Wachutka, G.: An extended thermodynamic model for the simultaneous simulation of the thermal and electrical behavior of semiconductor devices. In: Proceedings of the Sixth International Conference on the Numerical Analysis of Semiconductor Devices and Integrated Circuits (NASECODE VI), Dublin, Ireland, pp. 409–414 (1989) Google Scholar