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Regional approach to model charges and capacitances of intrinsic carbon nanotube field effect transistors

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Abstract

Estimation of total channel charge (Q Tot ) of carbon nanotube field effect transistor from the self-consistently computed charge density (Q Top ) at the top of conduction band subband minima, is found to be inaccurate. A regional approach based on extended ballistic transport theory is proposed to model Q Tot , and its partitioning into source and drain components. The models for charges and subsequently derived capacitances are validated with the numerically simulated data obtained using semi-classical technique. The model agreement with numerical data shows the superiority of our regional approach compared to ones obtained from only the information of Q Top .

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Authors and Affiliations

  1. Dept. of Electrical Engineering, IIT Madras, Chennai, 600036, India

    Nune V. Sudheer & Anjan Chakravorty

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  1. Nune V. Sudheer
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  2. Anjan Chakravorty
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Correspondence to Anjan Chakravorty.

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Sudheer, N.V., Chakravorty, A. Regional approach to model charges and capacitances of intrinsic carbon nanotube field effect transistors. J Comput Electron 11, 166–171 (2012). https://doi.org/10.1007/s10825-012-0391-1

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