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Quantum ballistic transport in the junctionless nanowire pinch-off field effect transistor

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Abstract

In this work we investigate quantum ballistic transport in ultrasmall junctionless and inversion mode semiconducting nanowire transistors within the framework of the self-consistent Schrödinger-Poisson problem. The quantum transmitting boundary method is used to generate open boundary conditions between the active region and the electron reservoirs. We adopt a subband decomposition approach to make the problem numerically tractable and make a comparison of four different numerical approaches to solve the self-consistent Schrödinger-Poisson problem. Finally we discuss the IV-characteristics for small (r≤5 nm) GaAs nanowire transistors. The novel junctionless pinch-off FET or junctionless nanowire transistor is extensively compared with the gate-all-around (GAA) nanowire MOSFET.

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Authors and Affiliations

  1. Interuniversitary Micro-Electronics Center (IMEC), Kapeldreef 75, 3001, Leuven, Belgium

    Dries Sels, Bart Sorée & Guido Groeseneken

Authors
  1. Dries Sels
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  2. Bart Sorée
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  3. Guido Groeseneken
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Correspondence to Dries Sels.

Additional information

D. Sels and B. Sorée also at: Physics Department, Universiteit Antwerpen, Belgium.

G. Groeseneken also at: Electronic Engineering Department, Katholieke Universiteit Leuven, Belgium.

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Sels, D., Sorée, B. & Groeseneken, G. Quantum ballistic transport in the junctionless nanowire pinch-off field effect transistor. J Comput Electron 10, 216–221 (2011). https://doi.org/10.1007/s10825-011-0350-2

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  • DOI: https://doi.org/10.1007/s10825-011-0350-2

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