Abstract
As passive crossbar memories contain no amplifying/signal restoring components, their scalability, reliability and speed depends exclusively on the quality of diodes, fuse/antifuse elements and interconnections that constitute them. This paper presents a computational study of ZnO-based Schottky diodes which are thought to be a good candidate for the junction of a crossbar memory, mainly due to their limited thermal budget which guarantees the compatibility with Silicon technology. The simulation shows that the diode characteristics are indeed suitable for their use as junctions. A circuit level simulation demonstrates that optimized ZnO devices would allow the realization of many-megabit memory arrays.
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Pra, M., Csaba, G., Erlen, C. et al. Simulation of ZnO diodes for application in non-volatile crossbar memories. J Comput Electron 7, 146–150 (2008). https://doi.org/10.1007/s10825-007-0167-1
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DOI: https://doi.org/10.1007/s10825-007-0167-1