Analysis of nano-scale MOSFET including uniaxial and biaxial strain

Abstract

In this paper, we focus on uniaxial and biaxial strain technologies, and we also investigate an optimum combination of strain method and channel direction. We linked the first principles band calculation program to the FUJITSU ensemble full band Monte Carlo simulator FALCON directly, which enables to incorporate arbitrary Si band structures such as uniaxial and biaxial strained-Si into device characteristics analysis. We show that the combination of biaxial tensile strain and <100> current for NMOS, and compressive uniaxial strain and <110> channel for PMOS are optimum methods for current enhancement. However, considering technological difficulties and process cost, it is one of the candidate methods to use the combination of uniaxial tensile strain and <100> channel direction for NMOS and that of uniaxial compressive strain and <110> channel direction for PMOS.

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References

  1. 1.

    Rim, K., Chan, K., Shi, L., Boyd, D., Ott, J., Klymko, N., Cardone, F., Tai, Lw., Koester, S., Cobb, M., Canaperi, D., To, B., Duch, E., Babich, I., Carruthers, R., Saunders, P., Walker, G., Zhang, Y., Steen, M., Ieong, M.: Fabrication and mobility characteristics of ultra-thin Si directly on insulator(SSDOI) MOSFETs. IEDM Tech. Dig. 311–314 (2003)

  2. 2.

    Bufler, FM., Fichtner, W.: Scaling of strained-Si n-MOSFETs into the ballistic regime and associated anisotropic effects. IEEE Trans. Electron Devices 50, 278–284 (2003)

    Article  Google Scholar 

  3. 3.

    Tanabe, R., Yamasaki, T., Ashizawa, Y., Oka, H.: Analysis of strained-Si device including quantum effect. J. Comp. Elec. 387–391 (2004)

  4. 4.

    http://www.fsis.iis.u-tokyo.ac.jp/theme/nanoscal/software/

  5. 5.

    Bude, J., Smith, R, K.: Phase-space simplex Monte Carlo for semiconductor transport. Semiconductor Science and Technology, Hot Carrier in Semiconductor. Proc. 8th Int Conf. 9, 840–843 (1994)

  6. 6.

    Irie, H., Kita, K., Kyuno, K., Toriumi, A.: In-plane mobility anisotropy and universality under uni-axial Strains in n- and p-MOS Inversion Layers on (100), (110), and (111)Si. IEDM Tech. Dig. 225–228 (2004)

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Correspondence to Ryo Tanabe.

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Tanabe, R., Yamasaki, T., Ashizawa, Y. et al. Analysis of nano-scale MOSFET including uniaxial and biaxial strain. J Comput Electron 6, 49–53 (2007). https://doi.org/10.1007/s10825-006-0050-5

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Keywords

  • Monte Carlo
  • Pseudo-potential
  • Strain
  • Si
  • Uniaxial
  • Biaxial
  • Ballistic transport
  • Scaling