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Scattering and space-charge effects in Wigner Monte Carlo simulations of single and double barrier devices

An Erratum to this article was published on 01 December 2006


Transport in single and double barrier devices is studied using a Monte Carlo solver for the Wigner transport equation. This approach allows the effects of tunneling and scattering to be included. Several numerical methods have been improved to render the Wigner Monte Carlo technique more robust, including a newly developed particle annihilation algorithm. A self-consistent iteration scheme with the Poisson equation was introduced. The role of scattering and space charge effects on the electrical characteristics of n-i-n nanostructures, ultra-scaled double gate MOSFETs, and GaAs resonant tunneling diodes is demonstrated.

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Correspondence to Viktor Sverdlov.

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Sverdlov, V., Grasser, T., Kosina, H. et al. Scattering and space-charge effects in Wigner Monte Carlo simulations of single and double barrier devices. J Comput Electron 5, 447–450 (2006).

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  • Device simulation
  • Quantum transport
  • Wigner equation
  • Monte Carlo method