Scattering and space-charge effects in Wigner Monte Carlo simulations of single and double barrier devices

An Erratum to this article was published on 01 December 2006

Abstract

Transport in single and double barrier devices is studied using a Monte Carlo solver for the Wigner transport equation. This approach allows the effects of tunneling and scattering to be included. Several numerical methods have been improved to render the Wigner Monte Carlo technique more robust, including a newly developed particle annihilation algorithm. A self-consistent iteration scheme with the Poisson equation was introduced. The role of scattering and space charge effects on the electrical characteristics of n-i-n nanostructures, ultra-scaled double gate MOSFETs, and GaAs resonant tunneling diodes is demonstrated.

This is a preview of subscription content, access via your institution.

References

  1. 1

    Palestri, P. et al.: Understanding quasi-ballistic transport in nano-MOSFETs: Part I—Scattering in the channel, and in the drain. IEEE Trans. Electron Devices 52(12), 2727 (2005)

    Article  Google Scholar 

  2. 2

    Jungemann, C.: et al.: Investigation of strained Si/SiGe devices by MC simulation, Solid-State Electron. 48(8), 1417 (2004)

    Article  Google Scholar 

  3. 3

    Gilbert, M. et al.: Phonon-assisted ballistic to diffusive crossover in silicon nanowire transistors. J. Appl. Phys. 98(9), 094303 (2005)

    Article  Google Scholar 

  4. 4

    Kosina, H. et al.: A Monte Carlo method seamlessly linking quantum and classical transport calculations. J. Computational Electronics 2(2–4), 147 (2002)

    Google Scholar 

  5. 5

    Frensley, W.: Boundary conditions for open quantum systems driven far from equilibrium. Revi. Modern Phys. 62(3), 745 (1990)

    Article  Google Scholar 

  6. 6

    Wigner, E.: On the quantum correction for thermodynamic equilibrium. Physi. Revi. 40, 749 (1932)

    MATH  Article  Google Scholar 

  7. 7

    Gehring, A., Kosina, H.: Wigner-function based simulation of quantum transport in scaled dg-mosfets using the monte carlo method. J. Comput. Electr. 4(1–2), 67 (2005)

    Google Scholar 

  8. 8

    Kosina, H., Nedjalkov, M.: Handbook of theoretical and computational nanotechnology In: 10 chapter Wigner Function Based Device Modeling, pp. 731–763. American Scientific Publishers Los Angeles (2006), (in print)

  9. 9

    Nedjalkov, M. et al.: Operator-split method for variance reduction in stochastic solutions for the wigner equation. Monte Carlo Methods Appl. 10(3–4), 461 (2004)

    Article  Google Scholar 

Download references

Author information

Affiliations

Authors

Corresponding author

Correspondence to Viktor Sverdlov.

Additional information

An erratum to this article can be found at http://dx.doi.org/10.1007/s10825-007-0146-6

Rights and permissions

Reprints and Permissions

About this article

Cite this article

Sverdlov, V., Grasser, T., Kosina, H. et al. Scattering and space-charge effects in Wigner Monte Carlo simulations of single and double barrier devices. J Comput Electron 5, 447–450 (2006). https://doi.org/10.1007/s10825-006-0041-6

Download citation

Keywords

  • Device simulation
  • Quantum transport
  • Wigner equation
  • Monte Carlo method