Wigner Function-Based Simulation of Quantum Transport in Scaled DG-MOSFETs Using a Monte Carlo Method

Abstract

Source-to-drain tunneling in deca-nanometer double-gate MOSFETs is studied using a Monte Carlo solver for the Wigner transport equation. This approach allows the effect of scattering to be included. The subband structure is calculated by means of post-processing results from the device simulator Minimos-NT, and the contribution of the lowest subband is determined by the quantum transport simulation. By separating the potential profile into a smooth classical component and a rapidly varying quantum component the numerical stability of the Monte Carlo method is improved. The results clearly show an increasing tunneling component of the drain current with decreasing gate length. For longer gate lengths the semi-classical result is approached.

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References

  1. 1.

    J.-P. Colinge, “Multiple-Gate SOI MOSFETs,” Solid-State Electron., 48, 897 (2004).

    Article  Google Scholar 

  2. 2.

    M. Lundstrom and Z. Ren, “Essential physics of carrier transport in nanoscale MOSFETs,” IEEE Trans. Electron Devices, 49(1), 133 (2002).

    Article  Google Scholar 

  3. 3.

    R. Venugopal et al., “Simulation of Quantum Transport in Nanoscale Transistors: Real versus Mode-Space Approach,” J. Appl. Phys., 92(7), 3730 (2002).

    Article  Google Scholar 

  4. 4.

    C. Jungemann et al., “Investigation of strained Si/SiGe devices By MC simulation,” Solid-State Electron., 48, 1417 (2004).

    Article  Google Scholar 

  5. 5.

    G.A. Khatawala et al., “Monte carlo Simulations of Double-Gate MOSFETs,” IEEE Trans. Electron Devices, 50(12), 2467 (2003).

    Article  Google Scholar 

  6. 6.

    F. Gámiz et al., “Double Gate Silicon on Insulator Transistors. A Monte Carlo study,” Solid-State Electron., 48, 937 (2004).

    Article  Google Scholar 

  7. 7.

    Monte Carlo “Study of a Resonant Tunneling Diode,” IEEE Trans. Electron Devices, 50(3), 769 (2003).

    Article  Google Scholar 

  8. 8.

    H. Kosina et al., “A Monte Carlo Method Seamlessly Linking Quantum and Classical Transport Calculations,” J. Computational Electronics, 2(2–4), 147 (2002).

    Article  Google Scholar 

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Correspondence to Andreas Gehring.

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Gehring, A., Kosina, H. Wigner Function-Based Simulation of Quantum Transport in Scaled DG-MOSFETs Using a Monte Carlo Method. J Comput Electron 4, 67–70 (2005). https://doi.org/10.1007/s10825-005-7109-6

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Keywords

  • device simulation
  • quantum transport
  • Wigner equation
  • double-gate MOSFET