Skip to main content
Log in

Quantum Potential Approach to Modeling Nanoscale MOSFETs

  • Published:
Journal of Computational Electronics Aims and scope Submit manuscript

Abstract

We propose a novel parameter-free quantum potential scheme for use in conjunction with particle-based simulations. The method is based on a perturbation theory around thermodynamic equilibrium and leads to an effective potential scheme in which the size of the electron depends upon its energy. The approach has been tested on the example of a MOS-capacitor by retrieving the correct sheet electron density. It has also been used in simulations of a 25 nm n-channel nanoscale MOSFET with high substrate doping density. We find that the use of the quantum potential approach gives rise to a threshold voltage shift of about 220 mV and drain current degradation of about 30%.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Similar content being viewed by others

References

  1. D.K. Ferry, “The onset of quantization in ultra-submicron semiconductor devices”, Superlatt & Microst., 27, 61 (2000).

    Google Scholar 

  2. G.J. Iafrate, H.L. Grubin, and D.K. Ferry, “Utilization of quantum distribution functions for ultra-submicron device transport,” Journal de Physique, 42 (Colloq. 7), 307 (1981).

    Google Scholar 

  3. C. Ringhofer, C. Gardner and D. Vasileska, “Effective potentials and quantum fluid models: A thermodynamic approach,” Inter. J. on High Speed Electronics and Systems, 13, 771 (2003).

    Article  Google Scholar 

  4. M.J. van Dort et al., “Quantum-mechanical threshold voltage shifts of MOSFETs caused by high levels of channel doping,” IEDM Tech. Dig., 495 (1991).

Download references

Author information

Authors and Affiliations

Authors

Corresponding author

Correspondence to Shaikh S. Ahmed.

Rights and permissions

Reprints and permissions

About this article

Cite this article

Ahmed, S.S., Vasileska, D., Heitzinger, C. et al. Quantum Potential Approach to Modeling Nanoscale MOSFETs. J Comput Electron 4, 57–61 (2005). https://doi.org/10.1007/s10825-005-7107-8

Download citation

  • Issue Date:

  • DOI: https://doi.org/10.1007/s10825-005-7107-8

Keywords

Navigation