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Comparison of Non-Equilibrium Green’s Function and Quantum-Corrected Monte Carlo Approaches in Nano MOS Simulation

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Abstract

In this paper, we present a comparative study between non-equilibrium Green’s function and quantum-corrected Monte Carlo approaches for an ultra-short channel MOSFET. As a result, we have found that the both models are equivalent in the simulation of quantum transport in a nano-scale MOSFET. We will also demonstrate that impurity scattering in the source region and plasmon scattering at the drain-end of the channel especially influence the drain current based on the quantum-corrected Monte Carlo approach.

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Authors and Affiliations

  1. Department of Electrical and Electronics Engineering, Kobe University, 1-1, Rokko-dai, Nada, Kobe, 657-8501, Japan

    Hideaki Tsuchiya

  2. Mail Stop: 229-1, NASA Ames Research Center, Moffett Field, CA, 94035-1000

    Alexei Svizhenko & M. P. Anantram

  3. Department of Electrical and Electronics Engineering, Kobe University, 1-1, Rokko-dai, Nada, Kobe, 657-8501, Japan

    Matsuto Ogawa & Tanroku Miyoshi

Authors
  1. Hideaki Tsuchiya
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  2. Alexei Svizhenko
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  3. M. P. Anantram
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  4. Matsuto Ogawa
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  5. Tanroku Miyoshi
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Corresponding author

Correspondence to Hideaki Tsuchiya.

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Tsuchiya, H., Svizhenko, A., Anantram, M.P. et al. Comparison of Non-Equilibrium Green’s Function and Quantum-Corrected Monte Carlo Approaches in Nano MOS Simulation. J Comput Electron 4, 35–38 (2005). https://doi.org/10.1007/s10825-005-7103-z

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  • DOI: https://doi.org/10.1007/s10825-005-7103-z

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