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Comprehensive Simulation of Vertical Cavity Surface Emitting Lasers: Inclusion of a Many-Body Gain Model

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Abstract

This paper describes a comprehensive simulation technique for semiconductor lasers. In particular, a many-body calculation of optical gain for the quantum-well region is integrated into a multi-dimensional electro-opto-thermal simulator. Simulation results of material gain and DC device data of a commercial 850 nm Vertical Cavity Surface Emitting Lasers (VCSEL) are compared to measurements. They illustrate the validity of the approach.

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Authors and Affiliations

  1. Swiss Federal Institute of Technology ETH Zurich, Gloriastr. 35, CH-8092, Zurich, Switzerland

    Bernd Witzigmann, Manuel Aschwanden, Valerio Laino, Mathieu Luisier, Stefan Odermatt & Matthias Streiff

  2. ISE Integrated Systems Engineering, Zurich, Switzerland

    Andreas Witzig

  3. Avalon Photonics, Zurich, Switzerland

    Paul Royo & Dominique Vez

Authors
  1. Bernd Witzigmann
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  2. Manuel Aschwanden
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  3. Valerio Laino
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  4. Mathieu Luisier
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  5. Stefan Odermatt
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  6. Matthias Streiff
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  7. Andreas Witzig
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  8. Paul Royo
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  9. Dominique Vez
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Corresponding author

Correspondence to Bernd Witzigmann.

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Witzigmann, B., Aschwanden, M., Laino, V. et al. Comprehensive Simulation of Vertical Cavity Surface Emitting Lasers: Inclusion of a Many-Body Gain Model. J Comput Electron 4, 7–10 (2005). https://doi.org/10.1007/s10825-005-7097-6

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  • DOI: https://doi.org/10.1007/s10825-005-7097-6

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