Periodic Si/SiO2/Si3N4/Si structures with an insular surface layer were formed by selective laser annealing. A study by Fourier infrared spectrometry in the range 2–25 μm showed a decrease in the transmittance of the insular structure formed by selective laser annealing as compared to the structure without annealing. The decrease in the transmittance coefficient may have been due to heavily doped regions of recrystallized silicon in the surface layer. An analysis of dispersion curves obtained by finite-difference time-domain (FDTD) modeling showed that 5–20-THz plasma-like oscillations could be supported in a layer of periodic highly doped silicon islands in a layer of undoped silicon. The study results were interpreted assuming that plasma-like oscillations (spoof surface plasmons) arose in the structure with an insular surface layer.
Similar content being viewed by others
References
C. L. Tan and H. Mohseni, Nanophotonics, 7, No. 1, 169–197 (2018).
F. F. Komarov, Ionic and Photonic Treatment of Materials [in Russian], BGU, Minsk (1998).
G. A. Kachurin, S. G. Cherkova, V. A. Volodin, D. V. Marin, and M. Deutschmann, Fiz. Tekh. Poluprovodn., 42, No. 2, 181–186 (2008).
V. P. Voronkov and G. A. Gurchenok, Fiz. Tekh. Poluprovodn., 24, No. 10, 1831–1834 (1990).
A. I. Mukhammad, K. V. Chizh, V. G. Plotnichenko, V. A. Yuryev, and P. I. Gaiduk, Semiconductors, 54, No. 14, 1889–1892 (2020).
The Stopping and Range of Ions in Matter Software (SRIM); http://www.srim.org/ (accessed Oct. 2021).
Nanophotonic FDTD Simulation Software, Lumerical FDTD; https://www.lumerical.com/products/fdtd/ (accessed Jan. 2020).
E. D. Palik, Handbook of Optical Constants of Solids, Vol. 2, Academic Press (1985).
J. Kischkat, S. Peters, B. Gruska, M. Semtsiv, M. Chashnikova, M. Klinkmuller, O. Fedosenko, S. Machulik, A. Aleksandrova, G. Monastyrskyi, Y. Flores, and W. T. Masselink, Appl. Opt., 51, No. 28, 6789–6798 (2012).
S. A. Maier, Plasmonics: Fundamentals and Applications, Springer Science + Business Media, New York (2007).
B. Luk′yanchuk, N. I. Zheludev, S. A. Maier, N. J. Halas, P. Nordlander, H. Giessen, and C. T. Chong, Nat. Mater., 9, 707–715 (2010).
A. V. Dvurechenskii, G. A. Kachurin, E. V. Nidaev, and L. S. Smirnov, Pulsed Annealing of Semiconducting Materials [in Russian], Nauka, Moscow (1982).
R. Kitamura, L. Pilon, and M. Jonasz, Appl. Opt., 46, No. 33, 8118–8133 (2007).
G. Busca, V. Lorenzelli, G. Porcile, M. I. Baraton, P. Quintard, and R. Marchand, Mater. Chem. Phys., 14, No. 2, 123–140 (1986).
S. C. Shen and M. Cardona, J. Phys., Colloq., 42, No. C4, 349–351 (1981).
M. Desouky, A. M. Mahmoud, and M. A. Swillam, Sci. Rep., 8, 2036 (2018).
F. Peragut, L. Cerutti, A. Baranov, J. P. Hugonin, T. Taliercio, Y. De Wilde, and J. J. Greffet, Optica, 4, No. 11, 1409–1415 (2017).
Y. Ra′di, C. R. Simovski, and S. A. Tretyakov, Phys. Rev. Appl., 3, 03700 (2015).
Y. Chang, D. Hasan, B. Dong, J. Wei, Y. Ma, G. Zhou, K. Wee Ang, and C. Lee, ACS Appl. Mater. Interfaces, 10, 38272–38279 (2018).
M. A. A. Abouelatta, M. A. Othman, M. Desouky, A. M. Mahmoud, and M. A. Swillam, Opt. Express, 29, No. 25, 41447–41456 (2021).
X. Zhao, C. Chen, A. Li, G. Duan, and X. Zhang, Opt. Express, 27, No. 2, 1727–1739 (2019).
А. Pors, E. Moreno, L. Martin-Moreno, J. B. Pendry, and F. J. Garcia-Vidal, Phys. Rev. Lett., 108, 223905 (2012).
J. B. Pendry, L. Martin-Moreno, and F. J. Garcia-Vidal, Science, 305, 847 (2004).
P. Huidobro, A. Fernandez-Dominguez, J. Pendry, L. Martin-Moreno, and F. Garcia-Vidal, MRS Bull., 45, 318 (2020).
A. Kianinejad, Z. N. Chen, and C. Qiu, IEEE Trans. Microwave Theory Tech., 63, No. 6, 1817–1825 (2015).
A. Aigner, J. M. Dawes, S. A. Maier, and H. Ren, Light: Sci. Appl., 11, Art. No. 9, (2022); Art. No. 26 (correction) (2022).
Author information
Authors and Affiliations
Corresponding author
Additional information
Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 89, No. 4, pp. 511–518, July–August, 2022. https://doi.org/10.47612/0514-7506-2022-89-4-511-518.
Rights and permissions
Springer Nature or its licensor holds exclusive rights to this article under a publishing agreement with the author(s) or other rightsholder(s); author self-archiving of the accepted manuscript version of this article is solely governed by the terms of such publishing agreement and applicable law.
About this article
Cite this article
Mukhammad, A.I., Gaiduk, P.I., Nalivaiko, O.Y. et al. IR Transmittance of Si/SiO2/Si3N4/Si Insular Structures Formed by Selective Laser Annealing. J Appl Spectrosc 89, 677–683 (2022). https://doi.org/10.1007/s10812-022-01411-8
Received:
Published:
Issue Date:
DOI: https://doi.org/10.1007/s10812-022-01411-8