We investigated the radiative properties of InGaN/GaN heterostructures with multiple quantum wells (MQWs) grown on silicon substrates with different thicknesses of quantum wells at optical excitation. The correlation of laser and photoluminescent properties with the surface morphology of the gallium nitride coating layers and the density of V-defects has been established. It is shown that, with a growth in the density of V-defects, the threshold power density of the excitation of the generation of InGaN/GaN heterostructures with MQWs increases.
Similar content being viewed by others
References
O. Moutanabbir and U. Gösele, Ann. Rev. Mater. Res., 40, 469–500 (2010).
E. V. Lutsenko, V. N. Pavlovskii, V. Z. Zubialevich, A. I. Stognij, A. L. Gurskii, V. A. Hryshanau, A. S. Shulenkov, G. P. Yablonskii, O. Schön, H. Protzmann, M. Lünenbürger, B. Schineller, Y. Dikme, R. H. Jansen, and M. Heuken, Phys. Status Solidi (c), No. 1, 272–275 (2002).
A. L. Gurskii, E. V. Lutsenko, V. N. Pavlovskii, V. Z. Zubialevich, A. G. Ryabtsev, G. I. Ryabtsev, G. P. Yablonskii, Y. Dikme, A. Szymakovski, H. Kalisch, R. H. Jansen, B. Schineller, and M. Heuken, Int. Symp. Compd. Semicond. Post-Conf. Proc., 25–27 August, San Diego, USA IEEE (2003), pp. 197–203.
S. Guha and N. A. Bojarczuk, Appl. Phys. Lett., 73, No. 11, 1487–1489 (1998).
Dabing Li, Sci. Bull., 61, No. 22, 1723–1725 (2016).
E. V. Lutsenko, A. V. Danilchyk, N. P. Tarasuk, A. V. Andryieuski, V. N. Pavlovskii, A. L. Gurskii, G. P. Yablonskii, H. Kalisch, R. H. Jansen, Y. Dikme, B. Schineller, and M. Heuken, Phys. Status Solidi, 5, No. 6, 2263–2266 (2008).
V. N. Pavlovskii, E. V. Lutsenko, A. V. Danilchyk, V. Z. Zubialevich, A.V.Muravitskaya, G. P. Yablonskii, H. Kalisch, R. H. Jansen, B. Schineller, and M. Heuken, Int. Conf. Adv. Optoelectron. Lasers, 10–14 September, Sevastopol, Ukraine IEEE (2010), pp. 265–267.
V. Voronenkov, N. Bochkareva, R. Gorbunov, P. Latyshev, Y. Lelikov, Y. Rebane, A. Tsyuk, A. Zubrilov, and Y. Shreter, Jpn. J. Appl. Phys., 52, No. 8(2), 10–14 (2013).
H. Wang, Q. Tan, and X. He, JETP Lett., 112, No. 3, 157–160 (2020).
S. W. Chen, C. J. Chang, and T. C. Lu, Crystals, 10, No. 4, 311–321 (2020).
X. Wang, F. Liang, D. Zhao, Z. Liu, J. Zhu, and J. Yang, Nanoscale Res. Lett., 15, No. 1, 191–201 (2020).
Hung Ling Tsai, Ting Yu Wang, Jer Ren Yang, Chang Cheng Chuo, Jung Tsung Hsu, Zhe Chuan Feng, and Makoto Shiojiri, Mater. Trans., 48, No. 5, 894–898 (2007).
Author information
Authors and Affiliations
Corresponding author
Additional information
Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 88, No. 6, pp. 895–899, November–December, 2021.
Rights and permissions
About this article
Cite this article
Danilchyk, A.V., Nagornyi, A.V., Rzheutskyi, N.V. et al. Effect of the Density of Surface V-Defects on Laser Properties of InGaN/GaN Heterostructures with Multiple Quantum Wells Grown on Silicon Substrates. J Appl Spectrosc 88, 1164–1168 (2022). https://doi.org/10.1007/s10812-022-01294-9
Received:
Published:
Issue Date:
DOI: https://doi.org/10.1007/s10812-022-01294-9