This paper reports a novel way for the synthesis of Ge-doped ZnO particles by a mechanically milled Ge and ZnO powder mixture (ZnO:Ge) followed by thermal annealing in Ar + 5%H2 to achieve near-band-edge (NBE) emission of ZnO with controllable intensities. The Ge-doped ZnO particles were synthesized by mechanical milling of a ZnO and Ge powder mixture up to 50 h in particularly, using different ZnO:Ge ratios and annealing temperatures. The Ge-doped ZnO particles were observed to have a rounded morphology with a diameter of ~500 nm when an annealing temperature of 1000°C was used. The Ge-doped ZnO particles showed NBE emission of ~380 nm with a suppressed visible band of ~500 nm as a function of the Ge content and annealing temperatures. These results suggest that the current method is very useful for synthesis of Ge-doped ZnO particles to obtain NBE emission, which is of particular importance for potential application in the optoelectronic and UV detector field.
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Abstract of article is published in Zhurnal Prikladnoi Spektroskopii, Vol. 86, No. 4, p. 667, July–August, 2019.
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Van, H.N., Thang, C.X., Tam, T.T.H. et al. Near-Band-Edge Emission of Mechanically Milled and Thermally Annealed ZnO:Ge Particles. J Appl Spectrosc 86, 726–730 (2019). https://doi.org/10.1007/s10812-019-00886-2
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DOI: https://doi.org/10.1007/s10812-019-00886-2