Results are given for a spectral ellipsometry study of silicon surfaces implanted with oxygen ions in the dose range 7.5·1014–3.7·1016 ions/cm2 and helium ions in the range 6·1016–6·1017 ions/cm2 with energy 40 keV at constant ion current density 2 μA/cm2. The irradiated substrates were at room temperature. Curves are shown for the dependence of the thickness of the implanted layer in the irradiated plates and the dependence of the extent of amorphization of this layer on the ion implantation dose.
This is a preview of subscription content, log in via an institution to check access.
Similar content being viewed by others
References
P. Petrik, O. Polga, M. Fried, T. Lohner, N. Q. Khanh, and J. Gyulai, J. Appl. Phys., 93, 1987–1990 (2003).
D. Shamiryan and D. V. Likhachev, in: M. Goorsky (editor), Ion Implantation, InTech (2012), pp. 89–104.
V. V. Bazarov, V. F. Valeev, V. I. Nuzhdin, Y. N. Osin, G. G. Gumarov, and A. L. Stepanov, Solid State Phenom., 233–234, 525–529 (2015).
V. V. Bazarov, V. I. Nuzhdin, V. F. Valeev, V. V. Vorobev, Yu. N. Osin, and A. L. Stepanov, Zh. Prikl. Spektrosk., 83, No. 1, 55–59 (2016) [J. Appl. Spectrosc., 83, 47–50 (2016)].
V. V. Bazarov, V. I. Nuzhdin, V. F. Valeev, and A. L. Stepanov, Vacuum, 148, 254–257 (2018).
K. Tsunoda, S. Adachi, and M. Takahashi, J. Appl. Phys., 91, 2936–2941 (2002).
K. Kurihara, S. Hikino, and S. Adachi, J. Appl. Phys., 96, 3247–3254 (2004).
K. V. Karabeshkin, P. A. Karasev, and A. I. Titov, Fiz. Tekhn. Poluprovodn., 47, No. 2, 206–210 (2013) [Semiconductors, 47, 242–246 (2013)]
K. V. Karabeshkin, P. A. Karasev, and A. I. Titov, Fiz. Tekhn. Poluprovodn., 50, No. 8, 1009–1015 (2016) [Semiconductors, 50, No. 8, 989–995 (2016)].
K. Kimura, Y. Oota, K. Nakajima, M. Suzuki, T. Aoki, J. Matsuo, A. Agarwal, B. Freer, A. Stevenson, and M. Ameen, Nucl. Instr. Methods Phys. Res. B, 211, 206–210 (2003).
K. Kimura, S. Joumori, Y. Oota, K. Nakajima, and M. Suzuki, Nucl. Instr. Methods Phys. Res. B, 219–220, 351–357 (2004).
A. V. Khomich, V. I. Kovalev, E. V. Zavedeev, R. A. Khmelnitskiy, and A. A. Gippius, Vacuum, 78, 583–587 (2005).
J. F. Ziegler, J. P. Biersack, and M. D. Ziegler, SRIM. The Stopping and Range of Ions in Matter, SRIM Company (2008).
Author information
Authors and Affiliations
Corresponding author
Additional information
Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 86, No. 1, pp. 151–154, January–February, 2019.
Rights and permissions
About this article
Cite this article
Bazarov, V.V., Nuzhdin, V.I., Valeev, V.F. et al. Spectral Ellipsometry Study of Silicon Surfaces Implanted with Oxygen and Helium Ions. J Appl Spectrosc 86, 134–137 (2019). https://doi.org/10.1007/s10812-019-00793-6
Received:
Published:
Issue Date:
DOI: https://doi.org/10.1007/s10812-019-00793-6