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Excitonic Quasimolecules Formed by Spatially Separated Electrons and Holes in a Ge/Si Heterostructure with Germanium Quantum Dots

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It is shown that in a Ge/Si nanostructure with germanium quantum dots, two Ge quantum dots act as an excitonic quasimolecule, where the excitons (formed by spatially separated electrons and holes) are localized above the surfaces of the quantum dots. A substantial increase in binding energy is observed for the singlet ground state of the excitonic quasimolecule in the nanosystem, compared with the binding energy of a biexciton in a silicon single crystal. It is established that the major contribution to the binding energy of the quasimolecule comes from the electron–hole exchange interaction energy, which is considerably greater than the contribution from the electron–hole Coulomb interaction.

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Correspondence to S. I. Pokutnyi.

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Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 84, No. 2, pp. 248–252, March–April, 2017.

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Pokutnyi, S.I. Excitonic Quasimolecules Formed by Spatially Separated Electrons and Holes in a Ge/Si Heterostructure with Germanium Quantum Dots. J Appl Spectrosc 84, 268–272 (2017). https://doi.org/10.1007/s10812-017-0462-y

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  • DOI: https://doi.org/10.1007/s10812-017-0462-y

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