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Thermoluminescence Properties of Yb–Tb-Doped SiO2 Optical Fiber Subjected to 1.25 MeV Gamma Radiation

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A thermoluminescence (TL) analysis was carried out to study the sensitivity and dose responses of Yb–Tb-doped SiO2 optical fiber subjected to 1.25 MeV gamma radiation. The results are compared with the commercially available standard LiF:Mg, Ti (TLD-100) chip. The Yb–Tb-doped SiO2 optical fiber and TLD-100 chips were placed inside Perspex and irradiated with 1.25 MeV gamma photons with doses ranging from 1.0 to 10.00 Gy. The results clearly show the superiority of TLD-100 chips in terms of response and sensitivity. The sensitivity of Yb–Tb-doped optical fiber and TLD-100 chips is 45.25 and 768.85 nc/(mg × Gy) respectively.

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Authors and Affiliations

  1. Rabigh College of Science & Arts, King Abdulaziz University, 21911, Rabigh, Saudi Arabia

    I. Hossain

  2. Universiti Teknologi Malaysia, 81310, Skudai, Johor, Malaysia

    H. Wagiran & M. H. Sahini

Authors
  1. I. Hossain
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  2. H. Wagiran
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  3. M. H. Sahini
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Correspondence to I. Hossain.

Additional information

Published in Zhurnal Prikladnoi Spektroskopii, Vol. 84, No. 1, pp. 162–164, January–February, 2017.

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Hossain, I., Wagiran, H. & Sahini, M.H. Thermoluminescence Properties of Yb–Tb-Doped SiO2 Optical Fiber Subjected to 1.25 MeV Gamma Radiation. J Appl Spectrosc 84, 144–147 (2017). https://doi.org/10.1007/s10812-017-0442-2

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  • DOI: https://doi.org/10.1007/s10812-017-0442-2

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