Silicon-doped microcrystalline diamond films of 1 μm thickness were grown by chemical vapor deposition in microwave plasma from mixtures of methane–hydrogen–silane on substrates of aluminum nitride, tungsten, and silicon. The diamond films were found to contain optically active silicon vacancy (SiV) centers giving rise to the 737-nm band in the photoluminescence spectra. The spectral features of a newly discovered narrow band of comparable intensity at 720–722 nm were studied. It is shown that the band at 720–722 nm occurs in the photoluminescence spectra only in the presence of silica in the diamond, regardless of the substrate material. The temperature dynamics of the photoluminescence spectra in the range of 5–294 K were investigated. The possible nature and mechanisms of formation of the color centers responsible for the 720–722 nm band are discussed.
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Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 83, No. 2, pp. 249–254, March–April, 2016.
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Sedov, V.S., Krivobok, V.S., Khomich, A.V. et al. Color Centers in Silic On-Doped Diamond Films. J Appl Spectrosc 83, 229–233 (2016). https://doi.org/10.1007/s10812-016-0274-5
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DOI: https://doi.org/10.1007/s10812-016-0274-5