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Electroluminescence of Commercial Gap Green-Light-Emitting Diodes

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Journal of Applied Spectroscopy Aims and scope

The structure of the low-temperature spectrum of GaP(N) green-light-emitting diodes at 77 and 300 K was due to the recombination of excitons bound to N atoms and NN pairs. All spectral lines were identified. It was concluded that the half-width of the main luminescence line (hν = 2.175 eV, NN1) was due to natural broadening of the initial and final recombination states. It was found that increasing the current through the p–n-junction resulted in the growth of the N-line intensity relative to that of the NN1-line. The intensity redistribution may have been caused by a change of the capture cross-section of minority charge carriers on each center as the injection level increased.

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Authors and Affiliations

  1. Institute for Nuclear Research, National Academy of Sciences of Ukraine, 47 Nauka Ave., Kyiv, 03028, Ukraine

    O. N. Gontaruk, A. V. Kovalenko, O. V. Konoreva, E. V. Malyj, I. V. Petrenko, M. B. Pinkovs’ka & V. P. Tartachnyk

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  1. O. N. Gontaruk
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  2. A. V. Kovalenko
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  3. O. V. Konoreva
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  4. E. V. Malyj
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  5. I. V. Petrenko
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  6. M. B. Pinkovs’ka
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  7. V. P. Tartachnyk
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Correspondence to O. V. Konoreva.

Additional information

Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 80, No. 6, pp. 859–863, November– December, 2013.

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Gontaruk, O.N., Kovalenko, A.V., Konoreva, O.V. et al. Electroluminescence of Commercial Gap Green-Light-Emitting Diodes. J Appl Spectrosc 80, 851–854 (2014). https://doi.org/10.1007/s10812-014-9855-3

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  • DOI: https://doi.org/10.1007/s10812-014-9855-3

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