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Effect of preliminary annealing of silicon substrates on the spectral sensitivity of photodetectors in bipolar integrated circuits

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Journal of Applied Spectroscopy Aims and scope

We examine the results of an effect of preliminary annealing on the spectral sensitivity of photodetectors in bipolar integrated circuits, formed in silicon grown by the Czochralski method. We demonstrate the possibility of substantially improving the sensitivity of photodetectors in the infrared region of the spectrum with twostep annealing. The observed effect is explained by participation of oxidation in the gettering process, where oxidation precedes formation of a buried n+ layer in the substrate.

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References

  1. S. M. Sze, ed., VLSI Technology 1 [Russian translation], Mir, Moscow (1986).

    Google Scholar 

  2. S. M. Sze, The Physics of Semiconductor Devices, Pt. 2 [Russian translation], Mir, Moscow (1984).

    Google Scholar 

  3. V. I. Blynskii, I. A. Lemeshevskaya, and E. S. Golub, in: Proceedings, 2nd International Scientific and Technical Conference: Instrumentation 2009, Minsk, 11-13 November 2009 [in Russian], BNTU, Minsk (2009), pp. 251-252.

  4. H. Tsuya, K. Ogawa, and F. Shimura, Jpn. J. Appl. Phys., 20, No 1, L31–L34 (1981).

    Article  ADS  Google Scholar 

  5. V. I. Blynskii, V. V. Gorovoi, and S. Yu. Rokhlei, Vestsi AN BSSR, Ser. Fiz-Mat. Navuk, No. 1, 82–84 (1987).

    Google Scholar 

  6. B. I. Blynskii, V. A. Emel’yanov, E. S. Golub, A. M. Lemeshevskaya, and V. S. Shvedov, Zh. Prikl. Spektrosk., 75, No. 4, 588–591 (2008).

    Google Scholar 

  7. K. V. Ravi, Imperfections and Impurities in Semiconductor Silicon [Russian translation], Mir, Moscow (1984).

    Google Scholar 

  8. K. Yamamoto, S. Kishino, Y. Matsushita, and T. Lizik, Appl. Phys. Lett., 36, No. 3, 195–197 (1980).

    Article  ADS  Google Scholar 

  9. P. Antognetti, D. A. Antoniadis, R. W. Dutton, and W. G. Oldham, eds., Process and Device Simulation for MOS–VLSI Circuits [Russian translation], Radio i Svyaz’, Moscow (1988).

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Authors and Affiliations

  1. B. I. Stepanov Institute of Physics, National Academy of Sciences of Belarus, 68 prosp. Nezavisimosti, Minsk, 220072, Belarus

    V. I. Blynskii

  2. Integral NPO, Minsk, Belarus

    O. A. Bozhatkin, E. S. Golub, A. M. Lemeshevskaya & S. V. Shvedov

Authors
  1. V. I. Blynskii
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  2. O. A. Bozhatkin
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  3. E. S. Golub
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  4. A. M. Lemeshevskaya
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  5. S. V. Shvedov
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Correspondence to V. I. Blynskii.

Additional information

Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 77, No. 3, pp. 478–480, May–June, 2010.

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Blynskii, V.I., Bozhatkin, O.A., Golub, E.S. et al. Effect of preliminary annealing of silicon substrates on the spectral sensitivity of photodetectors in bipolar integrated circuits. J Appl Spectrosc 77, 445–447 (2010). https://doi.org/10.1007/s10812-010-9353-1

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  • DOI: https://doi.org/10.1007/s10812-010-9353-1

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