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Polarization switching in single-mode injection semiconductor laser

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Journal of Applied Spectroscopy Aims and scope

Based on a previously developed polarization component method, a phenomenological model is constructed for the generation of polarized radiation in single-mode semiconductor lasers and applied to polarization switching. This model gives a good description of the experimentally observed features of the polarization process. At the same time, a number of effects related to the polarization switching rate, hysteresis characteristics, and polarization switching during optical injection are interpreted anew in terms of the formation dynamics of the laser radiation.

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Authors and Affiliations

  1. Department of Applied Physics, Tafila University, Tafila, Jordan

    M. Jadan

  2. Belarusian State University, prosp. Nezavisimosti 4, 220030, Minsk, Belarus

    L. I. Burov, A. S. Gorbatsevich & E. S. Sokolov

Authors
  1. M. Jadan
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  2. L. I. Burov
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  3. A. S. Gorbatsevich
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  4. E. S. Sokolov
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Corresponding author

Correspondence to L. I. Burov.

Additional information

Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 76, No. 5, pp. 717–724, September–October, 2009.

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Jadan, M., Burov, L.I., Gorbatsevich, A.S. et al. Polarization switching in single-mode injection semiconductor laser. J Appl Spectrosc 76, 678–684 (2009). https://doi.org/10.1007/s10812-009-9252-5

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  • DOI: https://doi.org/10.1007/s10812-009-9252-5

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