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Photoelectric properties of Al/In2Se3 Schottky barriers

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Abstract

We used directional solidification of the melt to grow single crystals of the binary compound In2Se3 and then determined the composition of the crystals obtained and their structure. From Hall effect measurements, we determined the type of conductivity, the concentration, and the Hall mobility of the free electrons in the single crystals obtained, on which we developed photosensitive Al/In2Se3 Schottky barriers for the first time and determined their photoelectric properties. We established that the indicated barriers can be used to design broadband optical photoconverters based on In2Se3 single crystals.

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References

  1. S. A. Semiletov, Kristallografiya, 6, 158–160 (1960).

    Google Scholar 

  2. C. H. de Grool and J. S. Moodera, J. Appl. Phys., 89, 4336–4340 (2001).

    Article  ADS  Google Scholar 

  3. K. Kambas, Physica B, 160, 103–107 (1989).

    Article  ADS  Google Scholar 

  4. A. Likforman, D. Carre, and R. Hillel, Acta Cryst., B34, 1–5 (1978).

    Google Scholar 

  5. A. V. Novoselova and V. B. Lazarev, eds., Physicochemical Properties of Semiconductor Materials. Handbook [in Russian], Nauka, Moscow (1979).

    Google Scholar 

  6. N. Kh. Abrikosov, V. F. Bankina, L. V. Poretskaya, E. I. Skudnova, and S. N. Chizhevskaya, Semiconductor Chalcogenides and Alloys Based on Them [in Russian], Nauka, Moscow (1979).

    Google Scholar 

  7. G. A. Il’chuk, V. V. Kus’nezh, R. Yu. Petrus’, V. Yu. Rud’, and Yu. V. Rud’, Fiz. Tekh. Poluprovodn., 41, 53–55 (2007).

    Google Scholar 

  8. S. M. Sze, Physics of Semiconductor Devices, Wiley, New York (1981).

    Google Scholar 

  9. A. G. Milnes and D. L. Feucht, Heterojunctions and Metal-Semiconductor Junctions [Russian translation], Mir, Moscow (1975).

    Google Scholar 

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Authors and Affiliations

  1. Belorussian State University of Information Science and Electronics, 6 ul. P. Brovki, Minsk, 220013, Belarus

    I. V. Bodnar’ & D. V. Gorbachev

  2. St. Petersburg State Polytechnical University, St. Petersburg, Russia

    V. Yu. Rud’

  3. A. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg, Russia

    Yu. V. Rud’

Authors
  1. I. V. Bodnar’
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  2. V. Yu. Rud’
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  3. Yu. V. Rud’
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  4. D. V. Gorbachev
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Corresponding author

Correspondence to I. V. Bodnar’.

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Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 75, No. 3, pp. 425–427, May–June, 2008.

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Bodnar’, I.V., Rud’, V.Y., Rud’, Y.V. et al. Photoelectric properties of Al/In2Se3 Schottky barriers. J Appl Spectrosc 75, 456–459 (2008). https://doi.org/10.1007/s10812-008-9069-7

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  • DOI: https://doi.org/10.1007/s10812-008-9069-7

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