Abstract
Thermally stimulated luminescence (TSL) of Bi2Ge3O9, Bi4Ge3O12, and Bi12GeO20 and the primary components Bi2O3 and GeO2 was studied under x-ray excitation. Thermal activation energies and frequency factors of trapping centers in the studied ceramics were determined. The relationships of TSL bands of the studied ceramics with maxima at 141–145 and 166–170 K and damage to the Ge sublattice and of TSL bands with maxima at 104–110 and 180–190 K and recombination processes in the Bi sublattice were demonstrated. Recombination processes causing luminescence upon nonequilibrium charge carrier release from trapping centers occur in structural complexes of similar configuration that contain the Bi ion in a nearest environment of O atoms.
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Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 75, No. 3, pp. 359–364, May–June, 2008.
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Bordun, O.M., Kukharskii, I.I. & Gaidai, S.I. Thermally stimulated luminescence of bismuth germanate ceramics with the benitoite, eulitine, and sillenite structures. J Appl Spectrosc 75, 379–384 (2008). https://doi.org/10.1007/s10812-008-9057-y
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DOI: https://doi.org/10.1007/s10812-008-9057-y