Abstract
Samples of single-crystal silicon implanted with iron-group ions are investigated by electron paramagnetic resonance (EPR). The change in relative permittivity μr of the silicon layer modified by implanted nickel ions is found. The accumulation kinetics of paramagnetic centers of amorphous regions of silicon implanted with Co, Ni, and Fe are shown to be different. Magnetic hysteresis for both the wide EPR line due to implanted impurities and the EPR line due to dangling chemical silicon bonds is found.
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C. J. Choi, S. Y. Chang, Y. W. Ok, T. Y. Seong, H. Gan, and G. Z. Pan, J. Elect. Mater., 32, No. 10, 1072–1078 (2003).
M. A. Harry, G. Curello, M. S. Finney, K. J. Reeson, and B. J. Sealy, J. Phys. D: Appl. Phys., 29, 1822–1830 (1996).
B. Y. Choi, SMDL annual report (2003).
A. P. Dostanko, V. V. Baranov, and V. V. Shatalov, Current-Carrying Film Systems [in Russian], SBIS, Vysh. Shkola, Minsk (1989).
S. P. Murarka, Silicides for VLSI Applications, Academic Press, New York (1983).
A. A. Istratov, H. Hieslmair, and E. R. Weber, Appl. Phys. A, 69, 13–44 (1999).
S. I. Rembeza, Paramagnetic Resonance in Semiconductors [in Russian], Metallurgiya, Moscow (1988).
D. Van der Marel, A. Damaschelli, K. Schulte, and A. A. Menovsky, Physica, B, 244, 138–147 (1998).
L. S. Vlasenko, N. T. Son, A. B. van Oosten, C. A. J. Ammerlaan, A. A. Lebedev, E. S. Taptygov, and V. A. Khramtsov, Solid State Commun., 73, No. 10, 393–398 (1990).
R. M. Bayazitov, R. I. Batalov, E. I. Terukov, and V. Kh. Kudoyarova, Fiz. Tverd. Tela, 43, No. 9, 1569–1572 (2001).
J. F. Ziegler, J. P. Biersack, and U. Littmark, The Stopping and Range of Ions in Solids, Pergamon, New York (1985).
A. A. Bugai, I. M. Zaritskii, S. N. Lukin, E. N. Neimark, and N. N. Kabdin, Fiz. Tekh. Poluprovodn., 23, No. 5, 872–874 (1989).
N. A. Poklonskii, T. M. Lapchuk, and A. O. Korobko, in: Abstracts of Papers of the International Conference for the 40th Anniversary of IFTTP, Natl. Acad. Sci. Belarus, and the 90th Birthday of its Founder Acad. N. N. Sirota, “Critical problems in solid-state physics,” November 4–6, 2003, Minsk, Izd. Tsentr BGU, (2003), 44.
Yu. I. Golovin and R. B. Morgunov, Zh. Éksp. Teor. Fiz., 115, 605–624 (1999).
Yu. I. Golovin, R. B. Morgunov, A. A. Baskakov, M. V. Badylevich, and S. Z. Shmurak, Pis’ma Zh. Éksp. Teor. Fiz., 69, 114–118 (1999).
A. L. Buchachenko, R. Z. Sagdeev, and K. Z. Salikhov, Magnetic and Spin Effects in Chemical Reactions [in Russian], Nauka, Novosibirsk (1978).
N. A. Poklonskii, A. O. Korobko, and N. M. Lapchuk, in: Proceedings of the XVIth International Conference “Solid-State Radiation Physics,” Sevastopol’, July 3–8, 2006, Moscow, GNU “NII PMT,” (2006), 160–166.
N. A. Poklonski, N. M. Lapchuk, and A. O. Korobko, Semiconductors, 40, No. 10, 1151–1154 (2006).
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Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 75, No. 2, pp. 197–201, March–April, 2008.
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Dostanko, A.P., Korobko, A.O. & Lapchuk, N.M. Paramagnetic properties of single-crystal silicon implanted with iron-group transition metals. J Appl Spectrosc 75, 203–207 (2008). https://doi.org/10.1007/s10812-008-9028-3
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DOI: https://doi.org/10.1007/s10812-008-9028-3