Abstract
We have investigated the photoluminescence (PL) and photostimulated luminescence (PSL) spectra at 300 K to study the effect of isoelectronic impurities K+ and I− on the formation and energy structure of Eu2+-VCs isolated dipole centers and aggregate centers in the form of single crystals of CsEuBr3 in CsBr:Eu2+ single crystals. We have shown that K+ and I− impurities in a concentration of 5 mol% do not have a substantial effect on the energy spectrum of isolated dipole centers in CsBr:Eu2+ single crystals and the processes for the formation of such centers during growth of CsBr:Eu single crystals from the melt by the Bridgman method. We have established that in Cs0.95K0.05Br:Eu2+, more favorable conditions are realized for the formation of aggregate centers than in CsBr:Eu2+ and CsBr0.95K0.05Br:Eu2+ single crystals. So in order to improve the storage properties of phosphors based on CsBr:Eu2+, in particular for increasing the efficiency of PSL excitation, it is expedient to dope them with K+ impurity in a concentration up to 5 mol%.
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Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 74, No. 5, pp. 627–630, September–October, 2007.
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Zorenko, Y.V., Turchak, R.M. Effect of isoelectronic impurities K+ and I− on luminescence of CsBr:Eu2+ crystals. J Appl Spectrosc 74, 692–696 (2007). https://doi.org/10.1007/s10812-007-0111-y
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DOI: https://doi.org/10.1007/s10812-007-0111-y