Abstract
Complex and multiband photoluminescence spectra for GB and HBN centers in single crystals of cubic boron nitride (cBN) were recorded in the wavelength ranges 385–400 nm and 365–395 nm and the nature of these centers was studied. The use of models involving resonance vibrations and strongly shifted configuration diagrams for the electronic ground state and excited state made it possible to associate formation of the GB-1 center with the presence of tungsten impurity in cBN. It was established that the HBN band in the 300–350 nm range of the cathodoluminescence spectra of cBN polycrystals, single crystals, and micropowders is associated with luminescence centers present in microinclusions of graphite-like boron nitride (hBN). The nature of the hBN band is tentatively interpreted within the model of recombination of donor and acceptor defects in hBN: respectively nitrogen vacancies and carbon atoms in positions substituting for nitrogen.
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References
M. A. Reshchikov and H. Morkoc, J. Appl. Phys., 97, 061301–061396 (2005).
A. M. Zaitsev, Optical Properties of Diamond, FernUniversitat-GesamtHochschule in Hagen/Electrical Engineering Components (1995), 156.
A. M. Zaitsev, A. A. Melnikov, E. M. Shishonok, and V. B. Shipilo, Phys. Status Solidi (a), 94, 125–128 (1985).
V. B. Shipilo, E. M. Shishonok, and A. I. Lukomskii, Zh. Prikl. Spektr., 52, 566–571 (1990).
V. B. Shipilo, E. M. Shishonok, A. I. Lukomskii, and L. M. Gameza, Zh. Prikl. Spektr., 62, No. 1, 164–170 (1995).
E. M. Shishonok, V. B. Shipilo, A. I. Lukomskii, and L. M. Gameza, NATO ACI Series, High Technology, 3, 397–400 (1997).
E. M. Shishonok and J. W. Steeds, Diamond & Related Mater., 11, 1774–1780 (2002).
K. Watanabe, T. Taniguchi, and H. Kanda, Phys. Status Solidi (b), 201, 2561–2565 (2004).
E. M. Shishonok and J. W. Steeds, Zh. Prikl. Spektr., 70, 652–658 (2003).
E. M. Shishonok, T. Taniguchi, and T. Sekaguchi, Fiz. Tverd. Tela (2007). (in press)
E. M. Shishonok, T. Taniguchi, K. Watanabe, H. Haneda, and H. Kanda, Diamond & Related Mater., 12, 1133–1137 (2003).
T. Taniguchi, J. Tanaka, O. Mishima, T. Ohsawa, and S. Yamaoka, Diamond & Related Mater., 2, 1473–1478 (1993).
L. Trinkler, B. Berzina, M. Benabdesselam, P. Iacconi, L. Botter-Jensen, and K. Atobe, Rad. Meas., 38, 615–618 (2004).
E. M. Shishonok and J. W. Steeds, Int. Conf. Wide-Gap 2001: Doping Issues in Wide-Band-Gap Semiconductors, 21–23 March 2001, Exeter, England (2001).
V. B. Shipilo, A. I. Lukomskii, and L. M. Gameza, Zh. Prikl. Spektr., 55, 567–570 (1991).
R. Brout and W. Visscher, Phys. Rev. Lett., 9, 54–58 (1962).
R. N. Dixon, ed., Spectroscopy and Structure, Methuen, London (1965).
A. I. Lukomskii, V. B. Shipilo, L. M. Gameza, Zh. Prikl. Spektr., 57, 100–103 (1992).
E. Era, F. Minami, and T. Kuzuba, J. Lumin., 24-25, 71–74 (1981).
V. B. Shipilo, E. M. Shishonok, A. M. Zaitsev, N. G. Anichenko, and L. S. Unyarkha, Izv. Akad. Nauk SSSR, Ser. Neorg. Mater., 26, 1651–1657 (1990).
R. Geick, C. H. Perry, and G. Ruprecht, Phys. Rev., 146, 146–278 (1966).
E. W. Williams, Phys. Status Solidi, 25, 493–498 (1968).
Ya. E. Pokrovskii, ed., Radiative Recombination in Semiconductors (Collected Papers) [in Russian], Nauka, Moscow (1972).
V. A. Krasnoperov, N. V. Vekshina, M. B. Khusidman, and V. S. Neshpor, Zh. Prikl. Spektr., 11, 299–303 (1969).
V. Ageev, S. Klimentov, M. Urganov, E. Loubnin, A. Bensaoula, N. Badi, A. Tempez, and D. Starikov, Appl. Surf. Sci., 138, 364–369 (1999).
K. Watanabe, T. Taniguchi and H. Kanda, Phys. Status Solidi (b), 11, 2561–2565 (2004).
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Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 74, No. 2, pp. 241–246, March–April, 2007.
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Shishonok, E.M. Luminescence centers in cubic boron nitride. J Appl Spectrosc 74, 272–277 (2007). https://doi.org/10.1007/s10812-007-0042-7
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DOI: https://doi.org/10.1007/s10812-007-0042-7