Abstract
We theoretically examine injection polarization of nuclear spins in silicon nanostructures with hyperfine interaction of nuclei with excited triplet states. We predict the possibility of the appearance of self-sustaining nuclear spin polarization, initiated by an external field. We show that if the external magnetic field is varied, we observe up to a 600-fold jump in the number of spin-polarized nuclei. A similar up to 40-fold jump also appears as the charge carrier injection rate increases.
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Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 73, No. 5, pp. 647–653, September–October, 2006.
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Danilyuk, A.L., Borisenko, V.E. Nuclear spin polarization in silicon nanostructures with charge carrier injection. J Appl Spectrosc 73, 727–734 (2006). https://doi.org/10.1007/s10812-006-0146-5
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DOI: https://doi.org/10.1007/s10812-006-0146-5