Abstract
We have grown homogeneous CuIn5Se8 crystals with n-type conductivity and determined the activation energy for the donor centers. We created In/n-CuIn5Se8 Schottky barriers and obtained the first spectral dependences of the photoconversion quantum efficiency of these structures. From the results of analysis of the photoactive absorption edge of the Schottky barriers, we have interpreted the nature of the interband optical transitions and determined the bandgap for direct and indirect transitions in CuIn5Se8 crystals. We have established that it is feasible to use CuIn5Se8 in broadband optical photoconverters.
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Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 73, No. 4, pp. 502–505, July–August, 2006.
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Bodnar, I.V., Rud, V.Y. & Rud, Y.V. Photoelectric properties of In/n-CuIn5Se8 Schottky barriers. J Appl Spectrosc 73, 567–571 (2006). https://doi.org/10.1007/s10812-006-0119-8
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DOI: https://doi.org/10.1007/s10812-006-0119-8