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Rate of intersubband transitions of charge carriers in semiconductor quantum wells as a result of their Coulomb interaction

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Abstract

The intersubband scattering of charge carriers in semiconductor quantum wells as a result of their Coulomb interaction has been theoretically investigated. Analytical expressions for the rate of intersubband transitions in the process of electron—electron and electron—hole collisions have been derived in the Born approximation. The theoretical and experimental data on the photoluminescence decay time, obtained for the case of a nondegenerate distribution of charge carriers, were in qualitative agreement.

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Authors and Affiliations

  1. Belarusian State University, 4 Nezavisimost’ Ave., Minsk, 220050, Belarus

    A. N. Drozd & A. A. Afonenko

Authors
  1. A. N. Drozd
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  2. A. A. Afonenko
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Correspondence to A. A. Afonenko.

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Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 72, No. 6, pp. 782–787, November–December, 2005.

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Drozd, A.N., Afonenko, A.A. Rate of intersubband transitions of charge carriers in semiconductor quantum wells as a result of their Coulomb interaction. J Appl Spectrosc 72, 858–864 (2005). https://doi.org/10.1007/s10812-006-0016-1

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  • DOI: https://doi.org/10.1007/s10812-006-0016-1

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