Abstract
Zinc telluride (ZnTe) is considered as a favorable photovoltaic (PV) material for its desirable absorption coefficient, improved conversion efficiency, and consequently inexpensive production material requirements. The principal objective of this research is to improve the performance of newly designed Al/ZnO/CdS/ZnTe/In2Te3/Pt solar cell and to investigate the influence of the Indium telluride (In2Te3) back surface field (BSF) layer on the performance parameters of open-circuit voltage (Voc), short-circuit current density (Jsc), fill factor (FF), and power conversion efficiency (PCE). This simulation analyses the performance of the baseline structure Al/ZnO/CdS/ZnTe/Pt which is considered as without BSF and the proposed structure Al/ZnO/CdS/ZnTe/In2Te3/Pt with BSF. The thicknesses and doping density have been used are 30, 30, 500, and 100 nm and 1019, 1018, 1019, and 1021 cm−3 for ZnO, CdS, ZnTe, and In2Te3 layer, respectively, with bulk defect density of 1014 cm−3 for each layer of the proposed cell. The PCE has been achieved 18.40 and 20.20% with VOC of 1.860 and 2.008 V, JSC of 10.79 and 10.99 mA cm−2, as well as FF of 91.87 and 91.92% for the baseline and proposed solar cell, correspondingly. The present study provides the guidelines for the realization of high efficiency and thin ZnTe-based solar cell in cost-effective way.
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Data will be available on request to the corresponding author.
Abbreviations
- ZnTe:
-
Zinc telluride
- BSF:
-
Back surface field
- ZnO:
-
Zinc oxide
- VOC :
-
Open circuit voltage
- FF:
-
Fill factor
- SRV:
-
Surface recombination velocity
- Si:
-
Silicon
- CIGS:
-
Copper indium gallium selenide
- DS:
-
Dye-sensitized
- a-Si:
-
Amorphous silicon
- LED:
-
Light emitting diode
- PEDOT:PSS:
-
Poly (3,4ethylenedioxythiophene) polystyrene sulfonate
- Cu2O:
-
Copper (I) oxide
- PGEs:
-
Photo generated electrons
- Eg (eV):
-
Band gap
- NC (cm− 3):
-
CB effective density of states
- εr :
-
Dielectric permittivity (relative)
- TVh (cm s− 1):
-
Hole thermal velocity
- µh (cm2 V− 1 s− 1):
-
Hole mobility
- NA (cm− 3):
-
Shallow uniform acceptor density
- Se (cm s− 1):
-
Surface recombination velocity of electrons
- Φ (eV):
-
Work function of the metal contact
- RS (Ω cm2):
-
Series resistance
- In2Te3 :
-
Indium telluride
- PV:
-
Photovoltaic
- CdS:
-
Cadmium sulfide
- JSC :
-
Short circuit current
- PCE:
-
Power conversion efficiency
- SC:
-
Solar cell
- CdTe:
-
Cadmium telluride
- CZTS:
-
Copper zinc tin sulfide
- QD:
-
Quantum dot
- TFSC:
-
Thin film solar cell
- CuSCN:
-
Copper (I) thiocyanate
- Sb2S3 :
-
Antimony trisulfide
- NiOx :
-
Nickel oxide
- EQE:
-
External quantum efficiency
- χ (eV):
-
Electron affinity
- NV (cm− 3):
-
VB effective density of states
- TVe (cm s− 1):
-
Electron thermal velocity
- µe (cm2 V− 1 s− 1):
-
Electron mobility
- ND (cm− 3):
-
Shallow uniform donor density
- Er (eV):
-
Energy level with respect to reference
- Sh (cm s− 1):
-
Surface recombination velocity of holes
- Rf (%):
-
Refelctivity
- Rsh (Ω cm2):
-
Shunt resistance
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Acknowledgements
The authors would like to express their sincere gratitude to Dr. Marc Burgelman and his colleagues at the EIS Department at the University of Gent in Belgium for providing us with the opportunity to conduct research using the SCAPS-1D software.
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MHA: conceived, designed, performed the simulation process, analyzed and interpreted the data, prepared all figures, wrote and reviewed the manuscript. MDH: conceived, designed, wrote and reviewed the manuscript. MMH: conceived, designed and reviewed the manuscript. AZMTI: conceived, designed and reviewed the manuscript.
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Ali, M.H., Haque, M.D., Hossain, M.M. et al. Improving the efficiency of ZnTe based heterojunction solar cell with In2Te3 BSF layer. J Appl Electrochem 54, 1013–1031 (2024). https://doi.org/10.1007/s10800-023-02013-8
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DOI: https://doi.org/10.1007/s10800-023-02013-8