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Photo-selective chemical etching of InAs and GaSb to manufacture microscopic mirrors

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Acknowledgments

This work was carried out with the financial support of an ANUIES-ECOS-Nord cooperation project, CONACYT, PROMEP and FAI at UASLP.

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Authors and Affiliations

  1. Instituto de Investigación en Comunicación Óptica (IICO), UASLP, Av. Karakorum #1470, Lomas 4a Sección, C. P. 78210, San Luis Potosi, SLP, Mexico

    G. Huerta-Cuéllar, S. Guel-Sandoval, F. De Anda, V. H. Méndez & B. Torres-Loredo

  2. Centre d’Electronique et de Micro-optoelectronique de Montpellier (CEM2), Université de Montpellier II, Place Eugène Bataillon, 34095, Montpellier Cedex 5, France

    A. Garnache & A. Joullié

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  1. G. Huerta-Cuéllar
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  2. S. Guel-Sandoval
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  3. F. De Anda
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  4. V. H. Méndez
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  5. B. Torres-Loredo
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  6. A. Garnache
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  7. A. Joullié
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Correspondence to F. De Anda.

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Huerta-Cuéllar, G., Guel-Sandoval, S., De Anda, F. et al. Photo-selective chemical etching of InAs and GaSb to manufacture microscopic mirrors. J Appl Electrochem 38, 269–271 (2008). https://doi.org/10.1007/s10800-007-9416-z

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  • DOI: https://doi.org/10.1007/s10800-007-9416-z

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