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Structural Defects in Cd1 − x Zn x As2 Solid Solutions

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The impurity photoconductivity spectra of undoped Cd1 − x Zn x As2 single crystals with x ≤ 0.06 are measured in the range 85–300 K. The results are used to determine the ionization energies of donor and acceptor levels produced in the crystals by structural defects: ɛd ≈ 0.019, 0.26, and 0.42 eV; ɛa = 0.24 and 0.34 eV, respectively. The nature of the structural defects responsible for these levels is discussed.

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Translated from Neorganicheskie Materialy, Vol. 41, No. 10, 2005, pp. 1182–1185.

Original Russian Text Copyright © 2005 by Morozova, Marenkin, Mikhailov, Koshelev.

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Morozova, V.A., Marenkin, S.F., Mikhailov, S.G. et al. Structural Defects in Cd1 − x Zn x As2 Solid Solutions. Inorg Mater 41, 1039–1042 (2005). https://doi.org/10.1007/s10789-005-0257-z

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  • Inorganic Chemistry
  • Solid Solution
  • Structural Defect
  • Ionization Energy
  • Acceptor Level