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A p-i-n Model of CdTe/CdS Heterostructures

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Abstract

CdTe/CdS heterostructures are analyzed in terms of a p-i-n model in which the i layer consists of a CdTe1 − x Sx solid solution resulting from Te and S diffusion into CdS and CdTe, respectively. The lattice parameters of the solid solution are determined. The i layer is shown to be too thick for tunneling.

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Translated from Neorganicheskie Materialy, Vol. 41, No. 8, 2005, pp. 915–917.

Original Russian Text Copyright © 2005 by Janabergenov, Mirsagatov, Karazhanov.

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Janabergenov, J., Mirsagatov, S.A. & Karazhanov, S.Z. A p-i-n Model of CdTe/CdS Heterostructures. Inorg Mater 41, 800–802 (2005). https://doi.org/10.1007/s10789-005-0214-x

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  • DOI: https://doi.org/10.1007/s10789-005-0214-x

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