Abstract
The room-temperature electrical resistivity and Hall coefficient of [001]- and [010]-oriented CdSb single crystals are measured as functions of increasing (up to 7 GPa) and decreasing pressure. Some parameters of the high-pressure phase transformation in CdSb are evaluated from experimental data, and the fraction of the low-pressure phase is calculated as a function of pressure. The parameters of the phase transformation are shown to depend on the crystal orientation.
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Translated from Neorganicheskie Materialy, Vol. 41, No. 3, 2005, pp. 273–275.
Original Russian Text Copyright © 2005 by Mollaev, Arslanov, Dzhamamedov, Marenkin, Varnavskii.
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Mollaev, A.Y., Arslanov, R.K., Dzhamamedov, R.G. et al. High-pressure phase transformation of oriented CdSb single crystals. Inorg Mater 41, 217–219 (2005). https://doi.org/10.1007/s10789-005-0110-4
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DOI: https://doi.org/10.1007/s10789-005-0110-4