Abstract
A procedure is described for crystal growth of orthorhombic TlInS2. The lattice parameters of the grown crystals are a = 6.88 Å, b = 14.04 Å, and c = 4.02 Å (sp. gr. P2221, Z = 4, ρx = 6.59 g/cm3). The dielectric permittivity of the crystals is measured from 170 to 300 K. The spectral dependence of the 300-K photocurrent through the crystals indicates that orthorhombic TlInS2 is a wide-gap semiconductor. Its band gap, E g = 2.52 ± 0.01 eV, slightly exceeds that of monoclinic TlInS2.
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Translated from Neorganicheskie Materialy, Vol. 41, No. 2, 2005, pp. 138–142.
Original Russian Text Copyright © 2005 by Nadjafov, Alekperov, Guseinov.
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Nadjafov, A.I., Alekperov, O.Z. & Guseinov, G.G. Preparation and properties of orthorhombic TlInS2 . Inorg Mater 41, 98–101 (2005). https://doi.org/10.1007/s10789-005-0026-z
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DOI: https://doi.org/10.1007/s10789-005-0026-z