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The Properties of the Polaron in III-V Compound Semiconductor Quantum Dots Induced by the Influence of Rashba Spin-Orbit Interaction

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Abstract

We study the ground state energy (GSE) of weak coupling polaron confined in quantum dots (QD) of III-V compound semiconductors using the linear combinatorial operator (LCO) and the Lee-Low-Pines unitary transformation (LLPUT) method. Our calculated results show that the GSE of the polaron splits into two branches due to the Rashba spin-orbit (SO) coupling effect, and spin splitting spacing is influenced by Rashba SO coupling strength and the coupling strength and the effective mass of III-V compound semiconductor material. That reveals the SO coupling properties of weak coupling polaron in the QD of III-V compound semiconductors, which provides a theoretical platform for the fabrication of nanometer devices.

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Acknowledgements

This work was supported by National Natural Science Foundation of China (No 12164032).

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Authors and Affiliations

  1. Institute of Condensed Matter Physics, Inner Mongolia Minzu University (Inner Mongolia University for Nationalities), Tongliao, 028043, China

    Wei Zhang, Shuang Han, Xin-Jun Ma,  Xianglian, Yong Sun & Jing-Lin Xiao

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  1. Wei Zhang
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  2. Shuang Han
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  3. Xin-Jun Ma
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  4. Xianglian
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  5. Yong Sun
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  6. Jing-Lin Xiao
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Correspondence to Xin-Jun Ma, Xianglian or Yong Sun.

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Zhang, W., Han, S., Ma, XJ. et al. The Properties of the Polaron in III-V Compound Semiconductor Quantum Dots Induced by the Influence of Rashba Spin-Orbit Interaction. Int J Theor Phys 61, 131 (2022). https://doi.org/10.1007/s10773-022-05049-2

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